NPN transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32) - MJE200G

NPN transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32) - MJE200G. NPN transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32). Collector current: 5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Housing: TO-126 (TO-225, SOT-32). Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Spec info: complementary transistor (pair) MJE210. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 02:25.