NPN bipolar transistors

NPN transistor, 5A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 5A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Spec info: Rbe 50 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: 0.1...0.3us. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V

NPN transistor, 5A, 100V. Collector current: 5A. Collector/emitter voltage Vceo: 100V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 30W. Spec info: 12149-401-070. Type of transistor: NPN

NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 30 v. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Spec info: SD882-Y. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 12A, TO-220FP, TO-220F, 400V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Voltage Switch Mode'. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 4A, 60V. Collector current: 4A. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: b>750. Pd (Power Dissipation, Max): 40W. Spec info: 0503-000001. Type of transistor: NPN

NPN transistor, 600mA, TO-92, TO-92, 40V. Collector current: 600mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

ROHS: Yes. Housing: TO92. Frequency: 250MHz. Power: 500mW. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 75V. Collector current Ic [A]: 800mA, 0.8A

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1002. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 22k Ohms. BE diode: no. BE resistor: 22k Ohms. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Vebo: 10V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Note: 0.3W. Type of transistor: NPN

NPN transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. BE diode: no. Cost): 0.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 20mA, TO-92, TO-92, 30 v. Collector current: 20mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 4 v

NPN transistor, 3A, 80V. Collector current: 3A. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: hFE 20...90. Note: T32. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 120V

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 0.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 210V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 0.55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 10V

NPN transistor, 12A, ISOWATT218FX, TO-218-FX, 700V. Collector current: 12A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Collector/emitter voltage Vceo: 700V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Ic(pulse): 18A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Spec info: ICM--16A (tp=5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Vebo: 7V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Vebo: 8V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 400V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN