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Semiconductors Transistors NPN bipolar transistors

NPN transistor, PCB soldering, SOT-32, 500mA, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE340

NPN transistor, PCB soldering, SOT-32, 500mA, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE340
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Quantity excl. VAT VAT incl.
1 - 4 0.42£ 0.50£
5 - 9 0.40£ 0.48£
10 - 24 0.38£ 0.46£
25 - 49 0.34£ 0.41£
50 - 99 0.34£ 0.41£
100 - 249 0.34£ 0.41£
250 - 876 0.38£ 0.46£
Quantity U.P
1 - 4 0.42£ 0.50£
5 - 9 0.40£ 0.48£
10 - 24 0.38£ 0.46£
25 - 49 0.34£ 0.41£
50 - 99 0.34£ 0.41£
100 - 249 0.34£ 0.41£
250 - 876 0.38£ 0.46£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 876
Set of 1

NPN transistor, PCB soldering, SOT-32, 500mA, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE340. NPN transistor, PCB soldering, SOT-32, 500mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. Quantity in stock updated on 21/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 145
MJE350-ONS

MJE350-ONS

NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (accor...
MJE350-ONS
NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no
MJE350-ONS
NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no
Set of 1
0.89£ VAT incl.
(0.74£ excl. VAT)
0.89£

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