NPN bipolar transistors

NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 44H11G. Equivalents: MJD44H11G, MJD44H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no

NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V. BE diode: no. CE diode: no

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no

NPN transistor, 8A, 400V, 8A, TO-220AB. Collector current Ic [A], max.: 8A. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Housing: TO-220AB. Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 80W. Type of transistor: Power Transistor. Polarity: NPN. Power: 80W. Max frequency: 14 MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no

NPN transistor, 8A, TO-220, 150V, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Collector-Emitter Voltage VCEO: 150V. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031G

NPN transistor, 250V, 8A, TO-220. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz

NPN transistor, TO-220, 8A, 250V, 8A, TO-220AB, 250V. Housing: TO-220. Collector current Ic [A], max.: 8A. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15033

NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) MJE15035G. BE diode: no. CE diode: no

NPN transistor, 5A, TO-220, TO-220AB, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 6A, 450V. Collector current: 6A. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: SMPS. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1000V. Spec info: SWITCHMODE. BE diode: no. CE diode: no

NPN transistor, 8A, TO-220, TO-220AB, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 450V. C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no

NPN transistor, 1000V, 8A, TO-220. Collector-Emitter Voltage VCEO: 1000V. Collector current: 8A. Housing: TO-220. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 120W

NPN transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32). Collector current: 5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Housing: TO-126 (TO-225, SOT-32). Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Spec info: complementary transistor (pair) MJE210. BE diode: no. CE diode: no

NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-220AB, 10A, 10A, TO-220, TO-220AB, 60V. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 10A. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. RoHS: yes. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no

NPN transistor, PCB soldering, SOT-32, 500mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350

NPN transistor, 0.5A, TO-126 ( TO-225 ), 500V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-126 ( TO-225 ). Collector/emitter voltage Vceo: 500V. Housing: TO-126 (TO-225, SOT-32). Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no

NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-225, 500mA. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C