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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 18A, 18A, 0.18 Ohms, TO-220, TO-220AB, 200V - IRL640A

N-channel transistor, 18A, 18A, 0.18 Ohms, TO-220, TO-220AB, 200V - IRL640A
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.44£ 1.73£
5 - 5 1.37£ 1.64£
Quantity U.P
1 - 4 1.44£ 1.73£
5 - 5 1.37£ 1.64£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 5
Set of 1

N-channel transistor, 18A, 18A, 0.18 Ohms, TO-220, TO-220AB, 200V - IRL640A. N-channel transistor, 18A, 18A, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=25°C): 18A. Idss (max): 18A. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 08/06/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 26
IRL640

IRL640

N-channel transistor, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=...
IRL640
N-channel transistor, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
IRL640
N-channel transistor, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
Set of 1
1.86£ VAT incl.
(1.55£ excl. VAT)
1.86£

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