N-channel FETs and MOSFETs

N-channel transistor, 21A, 30A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1800pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 100V, 36A, 140W. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 36A. Housing (JEDEC standard): 140W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL540N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 26A, 36A, 250uA, 0.044 Ohms, D2PAK ( TO-263 ), 100V. ID (T=100°C): 26A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 1800pF. Cost): 350pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 60.4k Ohms. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. RoHS: yes. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 36A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 36A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L540NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 5.7A, 9A, 9A, 0.4 Ohms, TO-220, TO-220A, 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220A. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 5.7A, 9A, 9A, 0.4 Ohms, TO-220, TO-220A, 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220A. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 69W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 0.4 Ohms, TO-220, 200V. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Drain-source voltage (Vds): 200V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 9A. Power: 74W. Control: Logic-Level

N-channel transistor, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 68A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, 0.18 Ohms, TO-220, 18A, 18A, TO-220AB, 200V. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. ID (T=25°C): 18A. Idss (max): 18A. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, PCB soldering (SMD), SMD-220, 200V, 17A. Housing: PCB soldering (SMD). Housing: SMD-220. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 17A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L640S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), SMD-220, 200V, 17A. Housing: PCB soldering (SMD). Housing: SMD-220. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L640S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1800pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 0.0038 Ohms, TO-220, 30V. On-resistance Rds On: 0.0038 Ohms. Housing: TO-220. Drain-source voltage (Vds): 30V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 150A. Power: 140W. Control: Logic-Level

N-channel transistor, 130A, 185A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 130A. ID (T=25°C): 185A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 7660pF. Cost): 2150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 740A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 21 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. G-S Protection: no

N-channel transistor, 243A, 343A, 250uA, 1.4M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 243A. ID (T=25°C): 343A. Idss (max): 250uA. On-resistance Rds On: 1.4M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 10315pF. Cost): 1980pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 39 ns. Type of transistor: MOSFET. Id(imp): 1372A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 65 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Function: DC Motor Drive, High Speed Power Switching. Spec info: logic level control. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 45A, 64A, 150uA, 0.0065 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 150uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 1077pF. Cost): 360pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Id(imp): 250A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 9 ns. Td(on): 9.1ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 100A, 150A, 100uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Spec info: High Frequency Synchronous. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 100A, 150A, 150uA, 2.5M Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 150uA. On-resistance Rds On: 2.5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 5110pF. Cost): 960pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: UPS. DC/DC Converter. Id(imp): 620A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) min.: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. G-S Protection: no

N-channel transistor, 130A, 185A, 250uA, 0.004 Ohms, SUPER-220, SUPER220, 40V. ID (T=100°C): 130A. ID (T=25°C): 185A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: SUPER-220. Housing (according to data sheet): SUPER220. Voltage Vds(max): 40V. C(in): 7660pF. Cost): 2150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 740A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 21 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. G-S Protection: no

N-channel transistor, 126A, 179A, 250uA, 0.005 Ohms, SUPER-220, SUPER220, 30 v. ID (T=100°C): 126A. ID (T=25°C): 179A. Idss (max): 250uA. On-resistance Rds On: 0.005 Ohms. Housing: SUPER-220. Housing (according to data sheet): SUPER220. Voltage Vds(max): 30 v. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 720A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 270W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 14 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. G-S Protection: no

N-channel transistor, PCB soldering, SUPER-220, 30 v, 179A. Housing: PCB soldering. Housing: SUPER-220. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 179A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRLBA3803PPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.009 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 2.3V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 270W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 1.7A. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: td(on) 9.3ns, td(off) 17ns, Logic-Level Gate. Id(imp): 14A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. C(in): 870pF. Cost): 360pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 110 ns. Various: Dynamic dv/dt Rating. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Fast Switching, Logic-Level Gate Drive. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, DIP4, 60V, 2.5A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRLD024PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 870pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 13A, 19A, 25uA, 0.042 Ohms, TO-220FP, TO-220FP, 55V. ID (T=100°C): 13A. ID (T=25°C): 19A. Idss (max): 25uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 55V. C(in): 740pF. Cost): 150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: Amplifier Applications Optimized for Class-D Audio. Id(imp): 80A. IDss (min): 2uA. Pd (Power Dissipation, Max): 39W. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 5.7 ns. Technology: Digital Audio HEXSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, 10A, 14A, 25uA, 93m Ohms, TO-220FP, TO-220FP, 55V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 25uA. On-resistance Rds On: 93m Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 55V. C(in): 660pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: Amplifier Applications Optimized for Class-D Audio. G-S Protection: diode. Id(imp): 60A. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.5 ns. Technology: Digital Audio HEXSFET. Operating temperature: -40...+170°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V