Electronic components and equipment, for businesses and individuals

N-channel transistor, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V - IRL530N

N-channel transistor, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V - IRL530N
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.89£ 1.07£
5 - 9 0.85£ 1.02£
10 - 24 0.81£ 0.97£
25 - 45 0.76£ 0.91£
Quantity U.P
1 - 4 0.89£ 1.07£
5 - 9 0.85£ 1.02£
10 - 24 0.81£ 0.97£
25 - 45 0.76£ 0.91£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 45
Set of 1

N-channel transistor, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V - IRL530N. N-channel transistor, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 800pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 7.2 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. Spec info: Gate control by logic level. G-S Protection: no. Quantity in stock updated on 22/04/2025, 01:25.

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.