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N-channel transistor, 83A, 60.4k Ohms, 250uA, 0.006 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - IRL3803S

N-channel transistor, 83A, 60.4k Ohms, 250uA, 0.006 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - IRL3803S
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Quantity excl. VAT VAT incl.
1 - 4 2.39£ 2.87£
5 - 9 2.27£ 2.72£
10 - 24 2.15£ 2.58£
25 - 33 2.03£ 2.44£
Quantity U.P
1 - 4 2.39£ 2.87£
5 - 9 2.27£ 2.72£
10 - 24 2.15£ 2.58£
25 - 33 2.03£ 2.44£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 33
Set of 1

N-channel transistor, 83A, 60.4k Ohms, 250uA, 0.006 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v - IRL3803S. N-channel transistor, 83A, 60.4k Ohms, 250uA, 0.006 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 83A. ID (T=25°C): 60.4k Ohms. Idss (max): 250uA. On-resistance Rds On: 0.006 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 470A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 1V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 22/04/2025, 01:25.

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