N-channel FETs and MOSFETs

N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no

N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. C(in): 1250pF. Cost): 260pF. Channel type: N. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 132A. IDss (min): 1uA. Pd (Power Dissipation, Max): 227W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 40nC). Drain-source protection : yes. G-S Protection: no

N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 248A. IDss (min): 10uA. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no

N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C): 49.5A. ID (T=25°C): 70A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 100V. C(in): 2500pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 280A. IDss (min): 1uA. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 30 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Low gate charge (typical 85nC). G-S Protection: no

N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 36A. IDss (min): 10uA. Marking on the case: FQA9N90C. Pd (Power Dissipation, Max): 280W. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, ITO-3P, 900V, 7.2A, 0.91 Ohms, TO-3PF, 900V, 30, TO-3PF (SOT399, 2-16E3A). Housing: PCB soldering. Housing: ITO-3P. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 7.2A. On-resistance Rds On: 0.91 Ohms. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Housing (JEDEC standard): 30. Housing: TO-3PF (SOT399, 2-16E3A). RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQAF11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 3.6A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 120W. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 670pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 62.4A. IDss (min): 1uA. Equivalents: FQD19N10LTM. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 15A, 24A, 10uA, 0.031 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.031 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 800pF. Cost): 270pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 96A. IDss (min): 1uA. Marking on the case: 30N06L. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Number of terminals: 2. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V, 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. ID (T=100°C): 3.67A. C(in): 220pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 5.8A. IDss (min): 1uA. Marking on the case: FQD7N10L. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Function: Low Gate Charge. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220, 600V, 12A, TO-220, 600V, 1. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 12A. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP12N60C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.65 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 70 ns. Switch-off delay tf[nsec.]: 280 ns. Ciss Gate Capacitance [pF]: 2290pF. Maximum dissipation Ptot [W]: 225W. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID (T=25°C): 12.5A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1800pF. Cost): 245pF. Channel type: N. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast Switching Speed. Technology: N-channel MOSFET transistor (DMOS, QFET). Drain-source protection : yes. G-S Protection: no

N-channel transistor, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 52A. IDss (min): 1uA. Pd (Power Dissipation, Max): 195W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Technology: N-channel MOSFET transistor (DMOS, QFET). Spec info: Low gate charge (typical 43nC). G-S Protection: no

N-channel transistor, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (T=25°C): 19A. Idss (max): 10uA. On-resistance Rds On: 0.078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 600pF. Cost): 165pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 78 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. IDss (min): 1uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.5 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, 12.1A, 19A, 19A, 0.14 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 19A. On-resistance Rds On: 0.14 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Id(imp): 76A. Pd (Power Dissipation, Max): 139W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Quantity per case: 1. Function: Fast switching, td(on)15ns, td(off)135ns. Technology: N-channel MOSFET transistor (DMOS, QFET)

N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1150pF. Cost): 320pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 132A. IDss (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Pd (Power Dissipation, Max): 127W. Function: Fast switching, Low Gate Charge. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 30.8A, 43.5A, 10uA, 0.03 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 30.8A. ID (T=25°C): 43.5A. Idss (max): 10uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1400pF. Cost): 425pF. Channel type: N. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Id(imp): 174A. IDss (min): 1uA. Pd (Power Dissipation, Max): 146W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low Gate Charge. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 32.2A, 45.6A, 10uA, 0.033 Ohms, TO-220, TO-220, 150V. ID (T=100°C): 32.2A. ID (T=25°C): 45.6A. Idss (max): 10uA. On-resistance Rds On: 0.033 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 150V. C(in): 2500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 182A. IDss (min): 1uA. Pd (Power Dissipation, Max): 210W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering, TO-220, 60V, 50A, TO-220, 60V, 1. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 1540pF. Maximum dissipation Ptot [W]: 120W. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220, 60V, 52.4A, TO-220, 60V, 1. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 52.4A. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 26.2A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1630pF. Maximum dissipation Ptot [W]: 121W. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 20 ns. Technology: DMOS, QFET, LOGIC N-Ch. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Spec info: Logic-Level

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 18A. IDss (min): 1uA. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1420pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26.4A. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Id(imp): 26.4A. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no

N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 300A. IDss (min): 1uA. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET. Quantity per case: 1. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF