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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-220, 60V, 50A, TO-220, 60V, 1 - FQP50N06

N-channel transistor, PCB soldering, TO-220, 60V, 50A, TO-220, 60V, 1 - FQP50N06
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Quantity excl. VAT VAT incl.
1 - 4 1.21£ 1.45£
5 - 9 1.15£ 1.38£
10 - 24 1.09£ 1.31£
25 - 49 1.03£ 1.24£
50 - 99 1.01£ 1.21£
100 - 249 0.92£ 1.10£
250 - 371 1.03£ 1.24£
Quantity U.P
1 - 4 1.21£ 1.45£
5 - 9 1.15£ 1.38£
10 - 24 1.09£ 1.31£
25 - 49 1.03£ 1.24£
50 - 99 1.01£ 1.21£
100 - 249 0.92£ 1.10£
250 - 371 1.03£ 1.24£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 371
Set of 1

N-channel transistor, PCB soldering, TO-220, 60V, 50A, TO-220, 60V, 1 - FQP50N06. N-channel transistor, PCB soldering, TO-220, 60V, 50A, TO-220, 60V, 1. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 1540pF. Maximum dissipation Ptot [W]: 120W. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 21/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
STP65NF06

STP65NF06

N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25...
STP65NF06
N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. IDss (min): 1uA. Marking on the case: P65NF06. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
STP65NF06
N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. IDss (min): 1uA. Marking on the case: P65NF06. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.79£ VAT incl.
(1.49£ excl. VAT)
1.79£

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