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N-channel transistor, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V, 3.67A - FQD7N10L

N-channel transistor, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V, 3.67A - FQD7N10L
Quantity excl. VAT VAT incl.
1 - 4 1.63£ 1.96£
5 - 9 1.55£ 1.86£
10 - 24 1.47£ 1.76£
25 - 45 1.39£ 1.67£
Quantity U.P
1 - 4 1.63£ 1.96£
5 - 9 1.55£ 1.86£
10 - 24 1.47£ 1.76£
25 - 45 1.39£ 1.67£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 45
Set of 1

N-channel transistor, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V, 3.67A - FQD7N10L. N-channel transistor, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V, 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. ID (T=100°C): 3.67A. C(in): 220pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 5.8A. IDss (min): 1uA. Marking on the case: FQD7N10L. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Function: Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 05:25.

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