Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 4.61£ | 5.53£ |
2 - 2 | 4.38£ | 5.26£ |
3 - 4 | 4.15£ | 4.98£ |
5 - 9 | 3.92£ | 4.70£ |
10 - 19 | 3.83£ | 4.60£ |
20 - 29 | 3.74£ | 4.49£ |
30 - 107 | 3.60£ | 4.32£ |
Quantity | U.P | |
---|---|---|
1 - 1 | 4.61£ | 5.53£ |
2 - 2 | 4.38£ | 5.26£ |
3 - 4 | 4.15£ | 4.98£ |
5 - 9 | 3.92£ | 4.70£ |
10 - 19 | 3.83£ | 4.60£ |
20 - 29 | 3.74£ | 4.49£ |
30 - 107 | 3.60£ | 4.32£ |
N-channel transistor, PCB soldering, ITO-3P, 900V, 7.2A, 0.91 Ohms, TO-3PF, 900V, 30, TO-3PF (SOT399, 2-16E3A) - FQAF11N90C. N-channel transistor, PCB soldering, ITO-3P, 900V, 7.2A, 0.91 Ohms, TO-3PF, 900V, 30, TO-3PF (SOT399, 2-16E3A). Housing: PCB soldering. Housing: ITO-3P. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 7.2A. On-resistance Rds On: 0.91 Ohms. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Housing (JEDEC standard): 30. Housing: TO-3PF (SOT399, 2-16E3A). RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQAF11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 3.6A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 120W. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 21/04/2025, 05:25.
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