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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V - FQD19N10L

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V - FQD19N10L
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Quantity excl. VAT VAT incl.
1 - 4 1.38£ 1.66£
5 - 9 1.31£ 1.57£
10 - 24 1.24£ 1.49£
25 - 49 1.17£ 1.40£
50 - 90 1.14£ 1.37£
Quantity U.P
1 - 4 1.38£ 1.66£
5 - 9 1.31£ 1.57£
10 - 24 1.24£ 1.49£
25 - 49 1.17£ 1.40£
50 - 90 1.14£ 1.37£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 90
Set of 1

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V - FQD19N10L. N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 670pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 62.4A. IDss (min): 1uA. Equivalents: FQD19N10LTM. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 28
IRLR3410

IRLR3410

N-channel transistor, 12A, 17A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 1...
IRLR3410
N-channel transistor, 12A, 17A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.105 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 800pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no
IRLR3410
N-channel transistor, 12A, 17A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.105 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. C(in): 800pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no
Set of 1
1.06£ VAT incl.
(0.88£ excl. VAT)
1.06£

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