IGBT transistors

IGBT transistor. RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-218. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUP313. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 32A. Maximum collector current (A): 64A. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 530 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 25A. Housing: TO-3P

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Maximum collector current (A): 60.4k Ohms. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

IGBT transistor. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V...3.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. C(in): 3200pF. Cost): 370pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 75 ns. Function: UPS, AC/DC motor controls and general purpose inverters. Germanium diode: no. Collector current: 64A. Ic(pulse): 160A. Ic(T=100°C): 40A. Marking on the case: FGL40N120AND. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. Spec info: NPT-Trench IGBT

IGBT transistor. RoHS: yes. Housing: TO-247. Component family: IGBT transistor. Housing: PCB soldering. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Maximum collector current (A): 280A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 35 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast. Germanium diode: no. Collector current: 70A. Ic(pulse): 280A. Ic(T=100°C): 40A. Marking on the case: 20N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. Assembly/installation: PCB through-hole mounting. Td(off): 73 ns. Td(on): 15 ns

IGBT transistor. RoHS: yes. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: UFS Series IGBT. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Marking on the case: HG20N60B3. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. Spec info: Typical Fall Time 140ns at 150°C. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G03H1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 3A. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 281 ns. Gate breakdown voltage Ugs [V]: 3.9V. Maximum dissipation Ptot [W]: 62.5W. Maximum collector current (A): 9.9A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

IGBT transistor. Type of transistor: IGBT transistor. Drain-source voltage: 1200V. Collector current: 50A. Power: 326W. Housing: TO-247AC

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G60T120. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 60A. Maximum collector current (A): 150A. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 480 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 375W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): no. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V

IGBT transistor. C(in): 1800pF. Cost): 55pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking, Microwave Ovens. Germanium diode: no. Collector current: 60A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: H30MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.85V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

IGBT transistor. Type of transistor: IGBT transistor. Collector-emitter voltage: 600V. Collector current: 40A. Power: 305W. Housing: TO-247AC

IGBT transistor. Type of transistor: IGBT transistor. Collector-emitter voltage: 600V. Collector current: 24A. Power: 110W. Housing: TO-220AB

IGBT transistor. Type of transistor: IGBT transistor. Drain-source voltage: 1200V. Collector current: 50A. Power: 326W. Housing: TO-247AC. Built-in diode: yes

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K25T1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 25A. Maximum collector current (A): 100A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 265 ns. Gate breakdown voltage Ugs [V]: 6.4V. Maximum dissipation Ptot [W]: 349W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +175°C

IGBT transistor. Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 82A. Power: 428W. Housing: TO-247AC. Built-in diode: yes

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Maximum collector current (A): 64A. Switch-on time ton [nsec.]: 43 ns. Switch-off delay tf[nsec.]: 240 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Maximum collector current (A): 32A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 180 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 19A. Maximum collector current (A): 38A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 10A. Maximum collector current (A): 38A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 13A. Maximum collector current (A): 52A. Switch-on time ton [nsec.]: 39 ns. Switch-off delay tf[nsec.]: 93 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 13A. Maximum collector current (A): 52A. Switch-on time ton [nsec.]: 21 ns. Switch-off delay tf[nsec.]: 86 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 31A. Maximum collector current (A): 60.4k Ohms. Switch-on time ton [nsec.]: 42 ns. Switch-off delay tf[nsec.]: 230 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 28A. Maximum collector current (A): 56A. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 160 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 34A. Maximum collector current (A): 68A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C