IGBT transistor FGL40N120ANDTU

IGBT transistor FGL40N120ANDTU. IGBT transistor. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V...3.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. C(in): 3200pF. Cost): 370pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 75 ns. Function: UPS, AC/DC motor controls and general purpose inverters. Germanium diode: no. Collector current: 64A. Ic(pulse): 160A. Ic(T=100°C): 40A. Marking on the case: FGL40N120AND. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. Spec info: NPT-Trench IGBT. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 26/07/2025, 14:25.