IGBT transistor HGTG20N60A4D. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current Ic [A]: 70A. Collector current: 70A. Collector peak current Ip [A]: 280A. Collector-emitter voltage Uce [V]: 600V. Collector/emitter voltage Vceo: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Function: SMPS Series IGBT with Anti-Parallel Hyperfast. Gate breakdown voltage Ugs [V]: 7V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): TO-247AC. Housing: TO-247. Ic(T=100°C): 40A. Ic(pulse): 280A. Manufacturer's marking: 20N60A4D. Marking on the case: 20N60A4D. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 290W. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 290W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Switch-off delay tf[nsec.]: 73 ns. Switch-on time ton [nsec.]: 15 ns. Td(off): 73 ns. Td(on): 15 ns. Trr Diode (Min.): 35 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 13/11/2025, 20:19