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Semiconductors Transistors IGBT transistors

IGBT transistor HGTG20N60A4D

IGBT transistor HGTG20N60A4D
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Quantity excl. VAT VAT incl.
1 - 1 7.76£ 9.31£
2 - 2 7.38£ 8.86£
3 - 4 7.22£ 8.66£
5 - 9 6.99£ 8.39£
10 - 14 6.83£ 8.20£
15 - 19 6.60£ 7.92£
20 - 149 7.12£ 8.54£
Quantity U.P
1 - 1 7.76£ 9.31£
2 - 2 7.38£ 8.86£
3 - 4 7.22£ 8.66£
5 - 9 6.99£ 8.39£
10 - 14 6.83£ 8.20£
15 - 19 6.60£ 7.92£
20 - 149 7.12£ 8.54£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 149
Set of 1

IGBT transistor HGTG20N60A4D. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4D. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Maximum collector current (A): 280A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 35 ns. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Original product from manufacturer Onsemi. Quantity in stock updated on 07/06/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 66
HGTG30N60A4D

HGTG30N60A4D

N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing ...
HGTG30N60A4D
N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
HGTG30N60A4D
N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
Set of 1
11.22£ VAT incl.
(9.35£ excl. VAT)
11.22£

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