IGBT transistor IKW50N120CS7XKSA1
Quantity
Unit price
1-4
23.31£
5-9
21.91£
10-19
21.43£
20-49
21.01£
50+
20.42£
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| Quantity in stock: 1 |
IGBT transistor IKW50N120CS7XKSA1. Built-in diode: yes. Charge: 290nC. Collector current Ic [A]: 50A. Collector current: 82A. Collector peak current Ip [A]: 150A. Collector-emitter voltage: 1200V. Emitter - Gate Voltage: ±20V. Housing: TO-247AC. Power: 428W. RoHS: yes. Type of transistor: IGBT transistor. Voltage (collector - emitter): 1200V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 15/02/2026, 06:30
IKW50N120CS7XKSA1
13 parameters
Built-in diode
yes
Charge
290nC
Collector current Ic [A]
50A
Collector current
82A
Collector peak current Ip [A]
150A
Collector-emitter voltage
1200V
Emitter - Gate Voltage
±20V
Housing
TO-247AC
Power
428W
RoHS
yes
Type of transistor
IGBT transistor
Voltage (collector - emitter)
1200V
Original product from manufacturer
Infineon Technologies