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IGBT transistor HGTG20N60B3

IGBT transistor HGTG20N60B3
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Quantity excl. VAT VAT incl.
1 - 1 5.37£ 6.44£
2 - 2 5.10£ 6.12£
3 - 4 4.94£ 5.93£
5 - 9 4.84£ 5.81£
10 - 19 4.73£ 5.68£
20 - 29 4.57£ 5.48£
30 - 126 4.41£ 5.29£
Quantity U.P
1 - 1 5.37£ 6.44£
2 - 2 5.10£ 6.12£
3 - 4 4.94£ 5.93£
5 - 9 4.84£ 5.81£
10 - 19 4.73£ 5.68£
20 - 29 4.57£ 5.48£
30 - 126 4.41£ 5.29£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 126
Set of 1

IGBT transistor HGTG20N60B3. IGBT transistor. RoHS: yes. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: UFS Series IGBT. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Marking on the case: HG20N60B3. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. Spec info: Typical Fall Time 140ns at 150°C. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Original product from manufacturer Fairchild. Quantity in stock updated on 26/07/2025, 13:25.

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