IGBT transistor IKW25N120H3FKSA1
Quantity
Unit price
1-1
11.72£
2-3
10.52£
4-5
9.58£
6-29
8.69£
30+
8.65£
| Quantity in stock: 7 |
IGBT transistor IKW25N120H3FKSA1. Built-in diode: yes. Collector current: 50A. Drain-source voltage: 1200V. Housing: TO-247AC. Power: 326W. Type of transistor: IGBT transistor. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 12/11/2025, 15:30
IKW25N120H3FKSA1
7 parameters
Built-in diode
yes
Collector current
50A
Drain-source voltage
1200V
Housing
TO-247AC
Power
326W
Type of transistor
IGBT transistor
Original product from manufacturer
Infineon Technologies