IGBT transistor IKW25N120T2
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 12.22£ | 14.66£ |
| 2 - 2 | 11.61£ | 13.93£ |
| 3 - 4 | 11.37£ | 13.64£ |
| 5 - 9 | 11.00£ | 13.20£ |
| 10 - 14 | 10.76£ | 12.91£ |
| 15 - 19 | 10.39£ | 12.47£ |
| 20 - 389 | 10.02£ | 12.02£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 12.22£ | 14.66£ |
| 2 - 2 | 11.61£ | 13.93£ |
| 3 - 4 | 11.37£ | 13.64£ |
| 5 - 9 | 11.00£ | 13.20£ |
| 10 - 14 | 10.76£ | 12.91£ |
| 15 - 19 | 10.39£ | 12.47£ |
| 20 - 389 | 10.02£ | 12.02£ |
IGBT transistor IKW25N120T2. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K25T1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 25A. Maximum collector current (A): 100A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 265 ns. Gate breakdown voltage Ugs [V]: 6.4V. Maximum dissipation Ptot [W]: 349W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Infineon. Quantity in stock updated on 07/06/2025, 21:25.
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