Diode rectifier bridges

Dielectric structure: Diode bridge. Number of terminals: 4. Dimensions: 24x15mm. Assembly/installation: PCB through-hole mounting

VRRM: 600V. Forward current (AV): 6A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 170A. Marking on the case: D5SB 60. Number of terminals: 4. Pitch: 10x7.5x7.5mm. Temperature: +150°C. RoHS: yes. Spec info: IFSM--170Ap. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x4.6mm ( SIL Bridge ). Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V

VRRM: 100V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50Ap. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 400V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50Ap. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 1000V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 7.4x6.2x3.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 1.5A. Peak voltage Urrm [V]: 1000V. Peak current Ifsm [A]: 60A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: DB-S. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.0V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Forward current (AV): 25A. VRRM: 1200V. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 350A. MRI (max): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 5. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V

VRRM: 600V. Forward current (AV): 35A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: three-phase rectifier bridge. IFSM: 450A. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 5. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V

Rated current [A]: 35A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 450A. RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.05V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 35A. Peak voltage Urrm [V]: 1.2 kV. Peak current Ifsm [A]: 450A. RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.05V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1600V. Forward current (AV): 35A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 450A. Equivalents: VISHAY--VS-36MT160. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 5. Dimensions: 28.5x28.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V

Rated current [A]: 1A. Peak voltage Urrm [V]: 700V. Peak current Ifsm [A]: 50A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: DIP6/4. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

VRRM: 400V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 160A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 15A. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 15A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 400V. Forward current (AV): 20A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 230A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. Dimensions: 30x20x3.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 25A. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 25A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (30x4.6x20mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1000V. Forward current (AV): 25A. Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. Three-phase: 0. IFSM: 350A. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V

VRRM: 1000V. Forward current (AV): 35A. Cj: 150pF. Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode bridge. IFSM: 350A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 30x20x4.8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V

VRRM: 800V. Forward current (AV): 3A. Conditioning: plastic tube. Conditioning unit: 35. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 90A. MRI (max): 10uA. Number of terminals: 4. Pitch: 3.8mm. Dimensions: 14.5x10.3x3.5mm. RoHS: yes. Spec info: IFSM--90Ap (t=20ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1.05V

VRRM: 1000V. Forward current (AV): 50A. Function: Rectifier bridge. Series: GBPC. Number of terminals: 4. Dimensions of connections: 6.35x0.8mm faston terminal

Rated current [A]: 12A. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (21.5x3.4x18.2mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C