Electronic components and equipment, for businesses and individuals

DB104G

DB104G
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[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.23£ 0.28£
10 - 24 0.22£ 0.26£
25 - 49 0.21£ 0.25£
50 - 68 0.20£ 0.24£
Quantity U.P
1 - 9 0.23£ 0.28£
10 - 24 0.22£ 0.26£
25 - 49 0.21£ 0.25£
50 - 68 0.20£ 0.24£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 68
Set of 1

DB104G. VRRM: 400V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap. Quantity in stock updated on 19/04/2025, 20:25.

Equivalent products :

Quantity in stock : 524
B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap
B1000D
VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap
Set of 1
0.29£ VAT incl.
(0.24£ excl. VAT)
0.29£
Quantity in stock : 172
DB106

DB106

VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor ma...
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4
DB106
VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£
Quantity in stock : 12
S1WB60B

S1WB60B

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
S1WB60B
VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Quantity per case: 4. Number of terminals: 4
S1WB60B
VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Quantity per case: 4. Number of terminals: 4
Set of 1
9.54£ VAT incl.
(7.95£ excl. VAT)
9.54£

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Quantity in stock : 1097
B1000S1500

B1000S1500

VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. S...
B1000S1500
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B1000S1500
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Quantity in stock : 60
S1WB80B

S1WB80B

VRRM: 800V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
S1WB80B
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Quantity in stock : 524
B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
B1000D
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B1000D
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0.29£ VAT incl.
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0.29£
Quantity in stock : 863
DB107S

DB107S

VRRM: 1000V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
DB107S
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0.28£ VAT incl.
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0.28£
Quantity in stock : 4
MA8910

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Note: Input--180-276V 40W...
MA8910
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Quantity in stock : 12865
1N4004

1N4004

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-2...
1N4004
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1N4004
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0.0364£ VAT incl.
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0.0364£
Quantity in stock : 34
S1WBS60

S1WBS60

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
S1WBS60
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S1WBS60
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1.93£
Quantity in stock : 25597
1N4148

1N4148

Forward current (AV): 200mA. IFSM: 500mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet...
1N4148
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1N4148
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0.0382£
Quantity in stock : 38
6N135

6N135

Baud rate: 1 MBit/s. CTR: 7...50 %. Diode IF: 25uA. Diode Power: 45mW. Diode threshold voltage: 1.4V...
6N135
[LONGDESCRIPTION]
6N135
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1.02£ VAT incl.
(0.85£ excl. VAT)
1.02£
Quantity in stock : 172
DB106

DB106

VRRM: 600V. Forward current (AV): 1A. Cj: 25pF. Dielectric structure: Diode bridge. Semiconductor ma...
DB106
[LONGDESCRIPTION]
DB106
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0.26£ VAT incl.
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0.26£

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