Diode rectifier bridges

ROHS: Yes. Housing: DSIL4

ROHS: Yes. Assembly/installation: THT. Max reverse voltage: 100V. Driving current: 8A. Electrical connection: THT. Rated current: 8A. Electrical connections: connection diameter 1.3mm. Pulse current max.: 200A. Variant: flat spade terminal (faston)

ROHS: Yes. Assembly/installation: THT. Max reverse voltage: 400V. Driving current: 8A. Electrical connection: THT. Rated current: 8A. Electrical connections: connection diameter 1.3mm. Pulse current max.: 200A. Variant: flat spade terminal (faston)

VRRM: 400V. Forward current (AV): 4A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Spec info: IFSM--200Ap (t=8.3ms)

VRRM: 600V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Three-phase: 0. IFSM: 200A. Equivalents: KBL06, RS406, RS406G. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)

VRRM: 800V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)

VRRM: 1000V. Forward current (AV): 4A. Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: RS407. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--200Ap (t=8.3ms)

VRRM: 600V. Forward current (AV): 2A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 60A. Equivalents: KPB206G, KBP06, RS205, RC205. Number of terminals: 4. Pitch: 4x4x4mm. Dimensions: 17.5x14x6.3mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--60Ap

Rated current [A]: 10/15/25A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10/15/25A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10/15/25A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10/15/25A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 200A. RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 10A. Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 175A. MRI (max): 10uA. MRI (min): 1000uA. Number of terminals: 4. Pitch: 13x13mm. RoHS: yes. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--175Ap

VRRM: 800V. Forward current (AV): 10A. Cj: 21pF. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 13x13mm. RoHS: yes. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4

VRRM: 1000V. Forward current (AV): 10A. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 13x13mm. Number of terminals: 4. RoHS: yes. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 10A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 10A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 400V. Forward current (AV): 3A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. Dimensions of connections: diameter 0.9mm, 10.8x10.8mm. Number of terminals: 4. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting

VRRM: 400V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300mA. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--300Ap (t=8.3ms)

VRRM: 600V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300mA. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--300Ap (t=8.3ms)

VRRM: 1000V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--300Ap (t=8.3ms)

VRRM: 100V. Forward current (AV): 25A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 400V. Forward current (AV): 25A. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 300A. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V