Diode rectifier bridges

VRRM: 50V. Diameter: 10mm. Equivalents: W005M. RoHS: yes. Assembly/installation: PCB through-hole mounting

Rated current [A]: 8A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 180A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (21.5x3.4x18.2mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 20A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 230A. Marking on the case: +~~-. Number of terminals: 4. Pitch: 10x7.5x7.5mm. Dimensions: 30x20x3.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 3A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: BR306, KBPC106. Dimensions of connections: diameter 0.9mm. Number of terminals: 4. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 80A. Number of terminals: 4. Pitch: 4.5mm. Dimensions: 22x18.5x3.5mm. Spec info: IFSM--80Ap (t=8.3ms)

Rated current [A]: 4A. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 135A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (21.5x3.4x18.2mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 800V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. Dimensions of connections: distance between legs 5.6x5.6mm. Number of terminals: 4. Spec info: IFSM--50A (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55°C...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Rated current [A]: 2.3A/1.5A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 50A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (19x3.5x10mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 0.9V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 2.3A/1.5A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 50A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (19x3.5x10mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 0.9V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 160V. Housing: SIL. Average Rectified Current (Max): 3.7A. Dimensions: 32x5.6x17mm. Diode type: Single Phase. Series: B80

Forward current (AV): 2.2A (or 3.7A if mounted on heat sink). VRRM: 80V. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 150A (50Hz 10ms). Dimensions of connections: 10x7.5x7.5mm. Number of terminals: 4. Dimensions: 32x17x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL

Rated current [A]: 5A/3.3A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 150A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (32x56x16mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 7A/4A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 250A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (32x56x16mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.05V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Diameter: 10mm. RoHS: yes

VRRM: 160V. Housing: DIP. Average Rectified Current (Max): 1A. Dimensions: 8.3x6.4x3.1mm. Diode type: Single Phase. Series: B80

VRRM: 160V. Housing: round. Average Rectified Current (Max): 2A. Dimensions: 9x9x5mm. Diode type: Single Phase. Series: B80

Rated current [A]: 1A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 45A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 8.3x6.4x2.5mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 160V. Housing: SMD. Average Rectified Current (Max): 1A. Dimensions: 8.3x6.4x2.5mm. Diode type: Single Phase. Series: B80

Rated current [A]: 2.3A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 65A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 8.3x6.4x2.5mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 0.95V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 200V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. RoHS: yes. Spec info: IFSM--50App t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

VRRM: 1000V. Forward current (AV): 3A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KIBPC110. Dimensions of connections: diameter 0.9mm, 10.8x10.8mm. Number of terminals: 4. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 1000V. Forward current (AV): 50A. Function: Rectifier bridge. Series: GBPC. Number of terminals: 4. Dimensions of connections: 6.35x0.8mm faston terminal

VRRM: 200V. Forward current (AV): 3.2A. Semiconductor material: silicon. Spec info: GI-Br

Rated current [A]: 1A. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 8.3x6.4x2.5mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 0.79V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Forward current (AV): 25A. VRRM: 800V. Function: Rectifier bridge. Equivalents: GBJ2508, KBJ6. Housing: SIL. Assembly/installation: PCB through-hole mounting