Diode rectifier bridges

VRRM: 600V. Forward current (AV): 2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 2 AMPS. IFSM: 50A. Marking on the case: 2W06. Pitch: 5.6x5.6mm. Dimensions: 10mm diameter. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--50A (50-60Hz, t=8.3mS)

VRRM: 1000V. Forward current (AV): 2A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 2 AMPS. IFSM: 60A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 2W10. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50A (50-60Hz, t=8.3mS)

Rated current [A]: 1A. Peak voltage Urrm [V]: 1000V. Peak current Ifsm [A]: 27A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: ABS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 400V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. Spec info: IFSM--50A (50Hz 10ms)

VRRM: 600V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. Number of terminals: 4. Spec info: IFSM--50A (50Hz 10ms)

VRRM: 800V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. Number of terminals: 4. Spec info: IFSM--50A (50Hz 10ms)

VRRM: 1000V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50A (50Hz 10ms). Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V

Rated current [A]: 1A. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 27A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: ABS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1000V. Forward current (AV): 35A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Dimensions: 28x28mm. RoHS: yes. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 35A. Peak voltage Urrm [V]: 1.6 kV. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 35A. Peak voltage Urrm [V]: 1.6 kV. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1000V. Forward current (AV): 6A. Cj: 50pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 158A. MRI (min): 5uA. Equivalents: KBU607G, KBU610, GBU6M-E3/45, GBU607C2. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 21.5x18.3x3.4mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm 158A (50Hz 10ms), 175A (60Hz 8.3ms)

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--50Ap

VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 1A. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 45A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 8.3x6.4x2.5mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1600V. Forward current (AV): 40A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 370A. MRI (max): 1500uA. MRI (min): 5uA. Dimensions of connections: 4x7.5mm. Dimensions: 35x25x4mm. RoHS: yes. Weight: 9g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.05V. Number of terminals: 5

VRRM: 1600V. Forward current (AV): 83A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 530A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Number of terminals: 5. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ECO-PAC 1. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. Spec info: IFSM--45° t=10ms (50Hz) 530A, t=8.3ms (60Hz) 570A

Max reverse voltage: 600V. Driving current: 1.5A. Electrical connection: THT. Semiconductor type: single-phase rectifier bridge. Electrical connections: solder connections. Pulse current max.: 50A. Variant: flat spade terminal (faston)

ROHS: Yes. Housing: DSIL4. Assembly/installation: THT. Max reverse voltage: 600V. Semiconductor type: Rectifier bridge. Rated current: 1.5A

Vrms: 250V. VRRM: 600V. Forward current (AV): 2.3A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: 230V mains rectifier. IFSM: 50A. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 19x10x3.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -50...+150°C

Rated current [A]: 2.3A/1.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 50A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (19x3.5x10mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 0.85V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 2.3A/1.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 50A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (19x3.5x10mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 0.85V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 500V. Forward current (AV): 2.5A. Dielectric structure: Diode bridge. IFSM: 50A. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08mm. Dimensions: 19x10x3.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting

Rated current [A]: 5A/3.3A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 150A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: SIL (32x56x16mm). Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 1A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 8.3x6.4x3.1mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C