Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.19£ | 1.43£ |
5 - 9 | 1.13£ | 1.36£ |
10 - 24 | 1.10£ | 1.32£ |
25 - 49 | 1.07£ | 1.28£ |
50 - 75 | 1.05£ | 1.26£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.19£ | 1.43£ |
5 - 9 | 1.13£ | 1.36£ |
10 - 24 | 1.10£ | 1.32£ |
25 - 49 | 1.07£ | 1.28£ |
50 - 75 | 1.05£ | 1.26£ |
GBI10J. VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 25/07/2025, 01:25.
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