Diode rectifier bridges

VRRM: 600V. Forward current (AV): 10A. Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 175A. MRI (max): 10uA. MRI (min): 1000uA. Number of terminals: 4. Pitch: 13x13mm. RoHS: yes. Spec info: IFSM--175Ap. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 800V. Forward current (AV): 10A. Cj: 21pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 13x13mm. RoHS: yes. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 1000V. Forward current (AV): 10A. Pitch: 19x19mm. Assembly/installation: PCB through-hole mounting. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 13x13mm. Number of terminals: 4. RoHS: yes. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 10A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 10A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 200A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 400V. Forward current (AV): 3A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. Dimensions of connections: diameter 0.9mm, 10.8x10.8mm. Number of terminals: 4. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting

VRRM: 400V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300mA. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300mA. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 1000V. Forward current (AV): 15A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 300A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Pitch: 29x29mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 100V. Forward current (AV): 25A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 400V. Forward current (AV): 25A. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 300A. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

VRRM: 600V. Forward current (AV): 25A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 400A. Note: 28x28x11.5mm. Marking on the case: MB256. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: MB-25. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 600V. Forward current (AV): 25A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MB-256W. Number of terminals: 4. RoHS: yes. Spec info: t=8.2ms. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

VRRM: 800V. Forward current (AV): 25A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 360A. MRI (max): 5mA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.26V. Forward voltage Vf (min): 1.26V

VRRM: 1000V. Forward current (AV): 25A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 360A. MRI (max): 5mA. MRI (min): 10uA. Marking on the case: MB25100. Dimensions of connections: 6.35x0.8mm faston terminal. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.26V. Forward voltage Vf (min): 1.26V

VRRM: 1000V. Forward current (AV): 25A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. RoHS: yes. Spec info: t=8.2ms. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 35A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 35A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 400A. MRI (max): 664uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

Rated current [A]: 35A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 35A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 400A. Dimensions of connections: 23x1.2mm. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Spec info: cable

Rated current [A]: 35A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 300A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 800V. Forward current (AV): 35A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 400A. MRI (max): 655uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. Dimensions: 28x28mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Rated current [A]: 35A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 400A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Configuration: connection by faston terminals. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 800V. Forward current (AV): 35A. Pinout: solder connections on printed circuit. Dielectric structure: Diode bridge. IFSM: 375A 50Hz (10ms). MRI (min): 10uA. Outer material: plastic housing with cooling face. Dimensions: 28.6x28.6x7.3mm. RoHS: yes. Assembly/installation: screw. Tr: 1500 ns. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.1V

VRRM: 1000V. Forward current (AV): 35A. IFSM: 400A. MRI (max): 1mA. MRI (min): 10uA. Dimensions of connections: 6.5x0.9mm faston terminal. Dimensions: 28x28mm. RoHS: yes. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V