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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

531 products available
Products per page :
Quantity in stock : 6
BY188G

BY188G

Forward current (AV): 1.2A. VRRM: 50V. Semiconductor material: silicon...
BY188G
Forward current (AV): 1.2A. VRRM: 50V. Semiconductor material: silicon
BY188G
Forward current (AV): 1.2A. VRRM: 50V. Semiconductor material: silicon
Set of 1
0.85£ VAT incl.
(0.71£ excl. VAT)
0.85£
Quantity in stock : 100
BY203-20S

BY203-20S

Forward current (AV): 0.25A. IFSM: 20A. Housing: SOD-57 ( Glass ). Housing (according to data sheet)...
BY203-20S
Forward current (AV): 0.25A. IFSM: 20A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 2000V. Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. MRI (max): 2uA. Number of terminals: 2. Spec info: IFSM--20Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V
BY203-20S
Forward current (AV): 0.25A. IFSM: 20A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 2000V. Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. MRI (max): 2uA. Number of terminals: 2. Spec info: IFSM--20Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V
Set of 1
1.07£ VAT incl.
(0.89£ excl. VAT)
1.07£
Out of stock
BY208-600

BY208-600

Forward current (AV): 0.75A. VRRM: 600V. Semiconductor material: silicon...
BY208-600
Forward current (AV): 0.75A. VRRM: 600V. Semiconductor material: silicon
BY208-600
Forward current (AV): 0.75A. VRRM: 600V. Semiconductor material: silicon
Set of 1
0.37£ VAT incl.
(0.31£ excl. VAT)
0.37£
Out of stock
BY226

BY226

Forward current (AV): 1.5A. VRRM: 650V. Semiconductor material: silicon. Note: GR...
BY226
Forward current (AV): 1.5A. VRRM: 650V. Semiconductor material: silicon. Note: GR
BY226
Forward current (AV): 1.5A. VRRM: 650V. Semiconductor material: silicon. Note: GR
Set of 1
0.24£ VAT incl.
(0.20£ excl. VAT)
0.24£
Quantity in stock : 2
BY228-TH

BY228-TH

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BY228-TH
Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V
BY228-TH
Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V
Set of 1
2.98£ VAT incl.
(2.48£ excl. VAT)
2.98£
Quantity in stock : 2530
BY228-VIS

BY228-VIS

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BY228-VIS
Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V
BY228-VIS
Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V
Set of 1
1.14£ VAT incl.
(0.95£ excl. VAT)
1.14£
Quantity in stock : 103
BY297

BY297

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x...
BY297
Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY297
Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
1.08£ VAT incl.
(0.90£ excl. VAT)
1.08£
Quantity in stock : 19422
BY299

BY299

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x...
BY299
Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 800V. RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY299
Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 800V. RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
0.58£ VAT incl.
(0.48£ excl. VAT)
0.58£
Quantity in stock : 67
BY448

BY448

Forward current (AV): 2A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BY448
Forward current (AV): 2A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V
BY448
Forward current (AV): 2A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V
Set of 1
0.73£ VAT incl.
(0.61£ excl. VAT)
0.73£
Quantity in stock : 3
BY458

BY458

Forward current (AV): 4A. Housing (according to data sheet): SOD-57. VRRM: 1200V. Semiconductor mate...
BY458
Forward current (AV): 4A. Housing (according to data sheet): SOD-57. VRRM: 1200V. Semiconductor material: silicon. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BY458
Forward current (AV): 4A. Housing (according to data sheet): SOD-57. VRRM: 1200V. Semiconductor material: silicon. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.41£ VAT incl.
(0.34£ excl. VAT)
0.41£
Quantity in stock : 2
BY459X-1500

BY459X-1500

Forward current (AV): 12A. VRRM: 1500V. Semiconductor material: silicon. Note: 48...82kHz. Note: Mon...
BY459X-1500
Forward current (AV): 12A. VRRM: 1500V. Semiconductor material: silicon. Note: 48...82kHz. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing)
BY459X-1500
Forward current (AV): 12A. VRRM: 1500V. Semiconductor material: silicon. Note: 48...82kHz. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing)
Set of 1
5.00£ VAT incl.
(4.17£ excl. VAT)
5.00£
Quantity in stock : 369
BY500-1000

BY500-1000

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.38£ VAT incl.
(0.32£ excl. VAT)
0.38£
Quantity in stock : 266
BY500-200

BY500-200

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-200
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY500-200
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.20£ VAT incl.
(0.17£ excl. VAT)
0.20£
Quantity in stock : 794
BY550-1000

BY550-1000

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY550-1000
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. MRI (max): 20uA. MRI (min): 20uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
BY550-1000
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. MRI (max): 20uA. MRI (min): 20uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£
Quantity in stock : 407
BY550-400

BY550-400

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY550-400
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 5uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
BY550-400
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 5uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.25£ VAT incl.
(0.21£ excl. VAT)
0.25£
Quantity in stock : 219
BY550-600

BY550-600

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY550-600
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 20uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
BY550-600
Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 20uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.24£ VAT incl.
(0.20£ excl. VAT)
0.24£
Quantity in stock : 220
BYD33D

BYD33D

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. V...
BYD33D
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V
BYD33D
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V
Set of 1
0.29£ VAT incl.
(0.24£ excl. VAT)
0.29£
Quantity in stock : 242
BYD33J

BYD33J

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. V...
BYD33J
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Number of terminals: 2. RoHS: yes. Spec info: 20Ap f=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V
BYD33J
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Number of terminals: 2. RoHS: yes. Spec info: 20Ap f=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V
Set of 10
1.40£ VAT incl.
(1.17£ excl. VAT)
1.40£
Quantity in stock : 35
BYD33M

BYD33M

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. V...
BYD33M
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. Spec info: IFSM--20Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V
BYD33M
Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. Spec info: IFSM--20Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V
Set of 1
0.66£ VAT incl.
(0.55£ excl. VAT)
0.66£
Quantity in stock : 520
BYM26C

BYM26C

Forward current (AV): 2.3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Gla...
BYM26C
Forward current (AV): 2.3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Semiconductor material: silicon. Note: S,contr,av. Note: 45App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BYM26C
Forward current (AV): 2.3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Semiconductor material: silicon. Note: S,contr,av. Note: 45App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.35£ VAT incl.
(0.29£ excl. VAT)
0.35£
Quantity in stock : 83
BYP35A6

BYP35A6

Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: ...
BYP35A6
Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
BYP35A6
Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
1.79£ VAT incl.
(1.49£ excl. VAT)
1.79£
Quantity in stock : 61
BYP35K6

BYP35K6

Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: ...
BYP35K6
Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
BYP35K6
Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
2.09£ VAT incl.
(1.74£ excl. VAT)
2.09£
Quantity in stock : 47
BYP60A6

BYP60A6

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: ...
BYP60A6
Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
BYP60A6
Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
2.17£ VAT incl.
(1.81£ excl. VAT)
2.17£
Quantity in stock : 70
BYP60K6

BYP60K6

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: ...
BYP60K6
Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
BYP60K6
Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
2.17£ VAT incl.
(1.81£ excl. VAT)
2.17£
Quantity in stock : 1164
BYS11-90

BYS11-90

Forward current (AV): 1.5A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214...
BYS11-90
Forward current (AV): 1.5A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: BYS109. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Weight: 0.064g. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V
BYS11-90
Forward current (AV): 1.5A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: BYS109. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Weight: 0.064g. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V
Set of 1
0.44£ VAT incl.
(0.37£ excl. VAT)
0.44£

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