Standard and Rectifier Diodes

Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 55s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 55s. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF Band Switching diode. Marking on the case: A2. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.8...1pF (f=1MHz), rD--0.5...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.2V

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: VHF/UHF Band Switching diode 10MHz. Marking on the case: AUs. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.75...1pF (f=1MHz), rf--0.4...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Tf (type): 120ns. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.75V

VRRM: 100V. Housing: DO35. Average Rectified Current per Diode: 0.15A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.45V / 0.01A. Mounting Type: THT. Reverse Leakage Current: 5uA / 75V. Reverse Recovery Time (Max): 1A. Information: 0.45V @ 10mA. Series: BAT4. MSL: n/a. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

VRRM: 40V. Housing: DO35. Average Rectified Current per Diode: 0.35A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.75V / 0.2A. Mounting Type: THT. Reverse Leakage Current: 25uA / 40V. Series: BAT4. MSL: n/a. Reverse Recovery Time (Max): 7.5A. Information: 0.75V @ 200mA. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C

Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component family: Silicon Schottky diode. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 1A. Forward voltage Vfmax (V): 0.4V @ 10mA. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1uA..100uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

Forward current (AV): 20mA. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 40V. Semiconductor material: Sb. Note: IFSM 0.75App/10ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 30mA. IFSM: 0.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.6pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 200nA. Marking on the case: BAT83S. Number of terminals: 2. Temperature: +125°C. RoHS: yes. Spec info: IFMS 0.5Ap/10ms. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 330mV

Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 0.1A. Mounting Type: THT. Reverse Leakage Current: 2uA / 25V. Reverse Recovery Time (Max): 4ns. Information: 0.4V @ 10mA. Series: BAT8. MSL: n/a

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 1.6x3.04 ). VRRM: 50V. Cj: 8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: Sb. Function: Schottky diode. Note: Switching Schottky diode. MRI (max): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--5Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Spec info: IFMS 5Ap/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV

Housing: miniMELF. VRRM: 4.87k Ohms. Average Rectified Current per Diode: 0.2A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 100nA / 300V. Reverse Recovery Time (Max): 50ns. Series: BAV

Housing: SOT23. VRRM: 100V. Average Rectified Current per Diode: 0.125A. Diode type: Switching. Forward Voltage (Max): <1.25V / 0.15A. Mounting Type: SMD. Reverse Leakage Current: 500nA / 80V. Reverse Recovery Time (Max): 4ns. Series: BAV

Forward current (AV): 250mA. IFSM: 1A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). VRRM: 250V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Small Signals Switching Diodes, High Voltage. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 200V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Number of terminals: 2. RoHS: yes. Spec info: IFSM--1App tp=1s, Tj=25°C. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 250V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Housing: SOT23. VRRM: 70V. Average Rectified Current per Diode: 0.15A. Diode type: Switching. Forward Voltage (Max): <1.0V / 0.05A. Mounting Type: SMD. Reverse Leakage Current: 30nA / 25V. Reverse Recovery Time (Max): 4ns. Series: BAW

Forward current (AV): 0.6A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Semiconductor material: silicon. Note: Small Signals Switching Diode. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. VRRM: 85V. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V

Forward current (AV): 0.115A. VRRM: 25V. Semiconductor material: silicon

Forward current (AV): 0.115A. VRRM: 35V. Semiconductor material: silicon

Forward current (AV): 8A. IFSM: 155A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Axial Leads. MRI (max): 20mA. MRI (min): 5mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 132Ap t=10us. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V

Forward current (AV): 0.5A. IFSM: 30A. Housing (according to data sheet): 7.3x22mm. VRRM: 12000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). VRRM: 1300V. RoHS: yes. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V