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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

532 products available
Products per page :
Quantity in stock : 48
BAT17-04

BAT17-04

Forward current (AV): 130mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 (...
BAT17-04
Forward current (AV): 130mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 4 v. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 54s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 54s. Number of terminals: 3. RoHS: yes. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V
BAT17-04
Forward current (AV): 130mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 4 v. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 54s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 54s. Number of terminals: 3. RoHS: yes. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V
Set of 1
0.38£ VAT incl.
(0.32£ excl. VAT)
0.38£
Quantity in stock : 93
BAT17-05

BAT17-05

Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. V...
BAT17-05
Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 55s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 55s. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V
BAT17-05
Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. Note: screen printing/SMD code 55s. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 55s. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V
Set of 1
0.53£ VAT incl.
(0.44£ excl. VAT)
0.53£
Quantity in stock : 4
BAT18

BAT18

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. V...
BAT18
Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF Band Switching diode. Marking on the case: A2. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.8...1pF (f=1MHz), rD--0.5...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.2V
BAT18
Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF Band Switching diode. Marking on the case: A2. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.8...1pF (f=1MHz), rD--0.5...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.2V
Set of 1
0.65£ VAT incl.
(0.54£ excl. VAT)
0.65£
Quantity in stock : 60
BAT18-04

BAT18-04

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. V...
BAT18-04
Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: VHF/UHF Band Switching diode 10MHz. Marking on the case: AUs. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.75...1pF (f=1MHz), rf--0.4...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Tf (type): 120ns. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.75V
BAT18-04
Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: VHF/UHF Band Switching diode 10MHz. Marking on the case: AUs. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Spec info: 0.75...1pF (f=1MHz), rf--0.4...0.7 Ohm. Assembly/installation: surface-mounted component (SMD). Tf (type): 120ns. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.75V
Set of 1
0.54£ VAT incl.
(0.45£ excl. VAT)
0.54£
Quantity in stock : 10583
BAT46

BAT46

VRRM: 100V. Housing: DO35. Average Rectified Current per Diode: 0.15A. Diode type: schottky. Diode C...
BAT46
VRRM: 100V. Housing: DO35. Average Rectified Current per Diode: 0.15A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.45V / 0.01A. Mounting Type: THT. Reverse Leakage Current: 5uA / 75V. Reverse Recovery Time (Max): 1A. Information: 0.45V @ 10mA. Series: BAT4. MSL: n/a. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BAT46
VRRM: 100V. Housing: DO35. Average Rectified Current per Diode: 0.15A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.45V / 0.01A. Mounting Type: THT. Reverse Leakage Current: 5uA / 75V. Reverse Recovery Time (Max): 1A. Information: 0.45V @ 10mA. Series: BAT4. MSL: n/a. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 5
0.32£ VAT incl.
(0.27£ excl. VAT)
0.32£
Quantity in stock : 14851
BAT48

BAT48

VRRM: 40V. Housing: DO35. Average Rectified Current per Diode: 0.35A. Diode type: schottky. Diode Co...
BAT48
VRRM: 40V. Housing: DO35. Average Rectified Current per Diode: 0.35A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.75V / 0.2A. Mounting Type: THT. Reverse Leakage Current: 25uA / 40V. Series: BAT4. MSL: n/a. Reverse Recovery Time (Max): 7.5A. Information: 0.75V @ 200mA. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C
BAT48
VRRM: 40V. Housing: DO35. Average Rectified Current per Diode: 0.35A. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.75V / 0.2A. Mounting Type: THT. Reverse Leakage Current: 25uA / 40V. Series: BAT4. MSL: n/a. Reverse Recovery Time (Max): 7.5A. Information: 0.75V @ 200mA. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C
Set of 5
0.68£ VAT incl.
(0.57£ excl. VAT)
0.68£
Quantity in stock : 8247
BAT54JFILM

BAT54JFILM

Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component fami...
BAT54JFILM
Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component family: Silicon Schottky diode. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 1A. Forward voltage Vfmax (V): 0.4V @ 10mA. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1uA..100uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C
BAT54JFILM
Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component family: Silicon Schottky diode. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 1A. Forward voltage Vfmax (V): 0.4V @ 10mA. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1uA..100uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C
Set of 5
0.88£ VAT incl.
(0.73£ excl. VAT)
0.88£
Quantity in stock : 1235
BAT62-03W

BAT62-03W

Forward current (AV): 20mA. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 40V....
BAT62-03W
Forward current (AV): 20mA. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 40V. Semiconductor material: Sb. Note: IFSM 0.75App/10ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)
BAT62-03W
Forward current (AV): 20mA. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 40V. Semiconductor material: Sb. Note: IFSM 0.75App/10ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)
Set of 1
0.54£ VAT incl.
(0.45£ excl. VAT)
0.54£
Quantity in stock : 607
BAT83S

BAT83S

Forward current (AV): 30mA. IFSM: 0.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet):...
BAT83S
Forward current (AV): 30mA. IFSM: 0.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.6pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 200nA. Marking on the case: BAT83S. Number of terminals: 2. Temperature: +125°C. RoHS: yes. Spec info: IFMS 0.5Ap/10ms. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 330mV
BAT83S
Forward current (AV): 30mA. IFSM: 0.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.6pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 200nA. Marking on the case: BAT83S. Number of terminals: 2. Temperature: +125°C. RoHS: yes. Spec info: IFMS 0.5Ap/10ms. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 330mV
Set of 10
1.30£ VAT incl.
(1.08£ excl. VAT)
1.30£
Quantity in stock : 2867
BAT85

BAT85

Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Switching speed (regeneration t...
BAT85
Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 0.1A. Mounting Type: THT. Reverse Leakage Current: 2uA / 25V. Reverse Recovery Time (Max): 4ns. Information: 0.4V @ 10mA. Series: BAT8. MSL: n/a
BAT85
Housing: DO35. VRRM: 30V. Average Rectified Current per Diode: 0.2A. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): <0.80V / 0.1A. Mounting Type: THT. Reverse Leakage Current: 2uA / 25V. Reverse Recovery Time (Max): 4ns. Information: 0.4V @ 10mA. Series: BAT8. MSL: n/a
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£
Quantity in stock : 9195
BAT86-133

BAT86-133

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): D...
BAT86-133
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 1.6x3.04 ). VRRM: 50V. Cj: 8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: Sb. Function: Schottky diode. Note: Switching Schottky diode. MRI (max): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--5Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
BAT86-133
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 1.6x3.04 ). VRRM: 50V. Cj: 8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: Sb. Function: Schottky diode. Note: Switching Schottky diode. MRI (max): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--5Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
Set of 1
0.25£ VAT incl.
(0.21£ excl. VAT)
0.25£
Quantity in stock : 55
BAT86S

BAT86S

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): D...
BAT86S
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Spec info: IFMS 5Ap/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
BAT86S
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Spec info: IFMS 5Ap/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£
Quantity in stock : 2250
BAV-103

BAV-103

Housing: miniMELF. VRRM: 4.87k Ohms. Average Rectified Current per Diode: 0.2A. Diode type: Switchin...
BAV-103
Housing: miniMELF. VRRM: 4.87k Ohms. Average Rectified Current per Diode: 0.2A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 100nA / 300V. Reverse Recovery Time (Max): 50ns. Series: BAV
BAV-103
Housing: miniMELF. VRRM: 4.87k Ohms. Average Rectified Current per Diode: 0.2A. Diode type: Switching. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 0.1A. Mounting Type: SMD. Reverse Leakage Current: 100nA / 300V. Reverse Recovery Time (Max): 50ns. Series: BAV
Set of 10
1.22£ VAT incl.
(1.02£ excl. VAT)
1.22£
Quantity in stock : 2480
BAV-70

BAV-70

Housing: SOT23. VRRM: 100V. Average Rectified Current per Diode: 0.125A. Diode type: Switching. Forw...
BAV-70
Housing: SOT23. VRRM: 100V. Average Rectified Current per Diode: 0.125A. Diode type: Switching. Forward Voltage (Max): <1.25V / 0.15A. Mounting Type: SMD. Reverse Leakage Current: 500nA / 80V. Reverse Recovery Time (Max): 4ns. Series: BAV
BAV-70
Housing: SOT23. VRRM: 100V. Average Rectified Current per Diode: 0.125A. Diode type: Switching. Forward Voltage (Max): <1.25V / 0.15A. Mounting Type: SMD. Reverse Leakage Current: 500nA / 80V. Reverse Recovery Time (Max): 4ns. Series: BAV
Set of 10
0.58£ VAT incl.
(0.48£ excl. VAT)
0.58£
Quantity in stock : 3120
BAV103

BAV103

Forward current (AV): 250mA. IFSM: 1A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-8...
BAV103
Forward current (AV): 250mA. IFSM: 1A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). VRRM: 250V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Small Signals Switching Diodes, High Voltage. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
BAV103
Forward current (AV): 250mA. IFSM: 1A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). VRRM: 250V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Small Signals Switching Diodes, High Voltage. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 10
0.48£ VAT incl.
(0.40£ excl. VAT)
0.48£
Out of stock
BAV18-TAP

BAV18-TAP

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): ...
BAV18-TAP
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
BAV18-TAP
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
Set of 10
0.47£ VAT incl.
(0.39£ excl. VAT)
0.47£
Quantity in stock : 9403
BAV20

BAV20

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): ...
BAV20
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 200V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Number of terminals: 2. RoHS: yes. Spec info: IFSM--1App tp=1s, Tj=25°C. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
BAV20
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 200V. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Number of terminals: 2. RoHS: yes. Spec info: IFSM--1App tp=1s, Tj=25°C. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
Set of 10
0.55£ VAT incl.
(0.46£ excl. VAT)
0.55£
Quantity in stock : 22384
BAV21

BAV21

Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): ...
BAV21
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 250V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
BAV21
Forward current (AV): 0.25A. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 250V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V
Set of 10
0.56£ VAT incl.
(0.47£ excl. VAT)
0.56£
Quantity in stock : 4070
BAW-56

BAW-56

Housing: SOT23. VRRM: 70V. Average Rectified Current per Diode: 0.15A. Diode type: Switching. Forwar...
BAW-56
Housing: SOT23. VRRM: 70V. Average Rectified Current per Diode: 0.15A. Diode type: Switching. Forward Voltage (Max): <1.0V / 0.05A. Mounting Type: SMD. Reverse Leakage Current: 30nA / 25V. Reverse Recovery Time (Max): 4ns. Series: BAW
BAW-56
Housing: SOT23. VRRM: 70V. Average Rectified Current per Diode: 0.15A. Diode type: Switching. Forward Voltage (Max): <1.0V / 0.05A. Mounting Type: SMD. Reverse Leakage Current: 30nA / 25V. Reverse Recovery Time (Max): 4ns. Series: BAW
Set of 10
0.74£ VAT incl.
(0.62£ excl. VAT)
0.74£
Quantity in stock : 26572
BAW27

BAW27

Forward current (AV): 0.6A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6...
BAW27
Forward current (AV): 0.6A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Semiconductor material: silicon. Note: Small Signals Switching Diode. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BAW27
Forward current (AV): 0.6A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Semiconductor material: silicon. Note: Small Signals Switching Diode. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 25
0.66£ VAT incl.
(0.55£ excl. VAT)
0.66£
Quantity in stock : 4015
BAW56W

BAW56W

Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. ...
BAW56W
Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. VRRM: 85V. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V
BAW56W
Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. VRRM: 85V. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V
Set of 10
0.41£ VAT incl.
(0.34£ excl. VAT)
0.41£
Quantity in stock : 17
BAY93

BAY93

Forward current (AV): 0.115A. VRRM: 25V. Semiconductor material: silicon...
BAY93
Forward current (AV): 0.115A. VRRM: 25V. Semiconductor material: silicon
BAY93
Forward current (AV): 0.115A. VRRM: 25V. Semiconductor material: silicon
Set of 10
0.68£ VAT incl.
(0.57£ excl. VAT)
0.68£
Quantity in stock : 236
BAY94

BAY94

Forward current (AV): 0.115A. VRRM: 35V. Semiconductor material: silicon...
BAY94
Forward current (AV): 0.115A. VRRM: 35V. Semiconductor material: silicon
BAY94
Forward current (AV): 0.115A. VRRM: 35V. Semiconductor material: silicon
Set of 10
0.88£ VAT incl.
(0.73£ excl. VAT)
0.88£
Quantity in stock : 142
BS890

BS890

Forward current (AV): 8A. IFSM: 155A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
BS890
Forward current (AV): 8A. IFSM: 155A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Axial Leads. MRI (max): 20mA. MRI (min): 5mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 132Ap t=10us. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V
BS890
Forward current (AV): 8A. IFSM: 155A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Axial Leads. MRI (max): 20mA. MRI (min): 5mA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 132Ap t=10us. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V
Set of 1
0.54£ VAT incl.
(0.45£ excl. VAT)
0.54£
Quantity in stock : 230
BY12

BY12

Forward current (AV): 0.5A. IFSM: 30A. Housing (according to data sheet): 7.3x22mm. VRRM: 12000V. Cj...
BY12
Forward current (AV): 0.5A. IFSM: 30A. Housing (according to data sheet): 7.3x22mm. VRRM: 12000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V
BY12
Forward current (AV): 0.5A. IFSM: 30A. Housing (according to data sheet): 7.3x22mm. VRRM: 12000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V
Set of 1
3.36£ VAT incl.
(2.80£ excl. VAT)
3.36£

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