Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 50A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V

VRRM: 1300V. Forward current (AV): 3A. IFSM: 100A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.2mm ). RoHS: yes. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--200Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. RoHS: yes. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 2A. IFSM: 70A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). VRRM: 800V. RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifms 70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.5x5.6mm ). VRRM: 800V. Cj: 65pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: 200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 2A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V

Forward current (AV): 4A. Housing (according to data sheet): SOD-57. VRRM: 1200V. Semiconductor material: silicon. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 12A. VRRM: 1500V. Semiconductor material: silicon. Note: 48...82kHz. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing)

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. Number of terminals: 2. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. MRI (max): 20uA. MRI (min): 20uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 5uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 5A. IFSM: 300A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 20uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--300Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Number of terminals: 2. RoHS: yes. Spec info: 20Ap f=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V

Forward current (AV): 1.3A. IFSM: 20A. Housing: SOD-81. Housing (according to data sheet): SOD-81. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 1uA. Number of terminals: 2. Spec info: IFSM--20Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V

Forward current (AV): 2.3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Semiconductor material: silicon. Note: S,contr,av. Note: 45App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 35A. IFSM: 400A. VRRM: 600V. Diameter: 12.75mm. Cj: 250pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--360A 50Hz 10ms, 400A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+215°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 60A. IFSM: 500A. VRRM: 600V. Diameter: 12.75mm. Cj: 430pF. Quantity per case: 1. Dielectric structure: casing connected to the anode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: Silicon-Press-Fit-Diodes, High Temperature. Number of terminals: 1. RoHS: yes. Spec info: IFSM--450A 50Hz 10ms, 500A 60Hz 8.3ms. Weight: 10g. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 1.5A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 90V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 1mA. MRI (min): 100uA. Marking on the case: BYS109. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Weight: 0.064g. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V

Forward current (AV): 3A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.5x5.3mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 16 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 60Ap tp=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1V

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V