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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

531 products available
Products per page :
Quantity in stock : 451
BYT03-400

BYT03-400

Forward current (AV): 3A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( ...
BYT03-400
Forward current (AV): 3A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.5x5.3mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 16 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 60Ap tp=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1V
BYT03-400
Forward current (AV): 3A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.5x5.3mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 16 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 60Ap tp=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1V
Set of 1
0.58£ VAT incl.
(0.48£ excl. VAT)
0.58£
Quantity in stock : 39
BYT08P-1000

BYT08P-1000

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
BYT08P-1000
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V
BYT08P-1000
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V
Set of 1
2.82£ VAT incl.
(2.35£ excl. VAT)
2.82£
Quantity in stock : 4
BYT28-500

BYT28-500

Forward current (AV): 5A. VRRM: 500V. Double: Double. Semiconductor material: silicon. Note: Vf<1.05...
BYT28-500
Forward current (AV): 5A. VRRM: 500V. Double: Double. Semiconductor material: silicon. Note: Vf<1.05V. Note: S-L ->I<-. Note: 50A/10ms. Tr: 50 ns. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.95V
BYT28-500
Forward current (AV): 5A. VRRM: 500V. Double: Double. Semiconductor material: silicon. Note: Vf<1.05V. Note: S-L ->I<-. Note: 50A/10ms. Tr: 50 ns. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.95V
Set of 1
1.46£ VAT incl.
(1.22£ excl. VAT)
1.46£
Quantity in stock : 2
BYT30P-1000

BYT30P-1000

Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per c...
BYT30P-1000
Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Note: metal part connected to the cathode. MRI (max): 5mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V
BYT30P-1000
Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Note: metal part connected to the cathode. MRI (max): 5mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V
Set of 1
8.15£ VAT incl.
(6.79£ excl. VAT)
8.15£
Quantity in stock : 157
BYT52M

BYT52M

Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet):...
BYT52M
Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Function: Fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 200 ns. Threshold voltage Vf (max): 1.3V
BYT52M
Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Function: Fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 200 ns. Threshold voltage Vf (max): 1.3V
Set of 1
0.88£ VAT incl.
(0.73£ excl. VAT)
0.88£
Quantity in stock : 80
BYT54M

BYT54M

Forward current (AV): 1.25A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Gl...
BYT54M
Forward current (AV): 1.25A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Note: Fast Silicon Mesa Rectifiers. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BYT54M
Forward current (AV): 1.25A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Note: Fast Silicon Mesa Rectifiers. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
1.02£ VAT incl.
(0.85£ excl. VAT)
1.02£
Quantity in stock : 110
BYT56G

BYT56G

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BYT56G
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V
BYT56G
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 400V. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V
Set of 1
0.70£ VAT incl.
(0.58£ excl. VAT)
0.70£
Quantity in stock : 199
BYT56M

BYT56M

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V
Set of 1
1.20£ VAT incl.
(1.00£ excl. VAT)
1.20£
Quantity in stock : 314
BYV10-40

BYV10-40

Forward current (AV): 1A. IFSM: 20A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
BYV10-40
Forward current (AV): 1A. IFSM: 20A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Cj: 220pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.55V
BYV10-40
Forward current (AV): 1A. IFSM: 20A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 40V. Cj: 220pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.55V
Set of 1
0.23£ VAT incl.
(0.19£ excl. VAT)
0.23£
Quantity in stock : 69
BYV26C

BYV26C

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV26C
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
BYV26C
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
Set of 1
0.52£ VAT incl.
(0.43£ excl. VAT)
0.52£
Quantity in stock : 62
BYV26D

BYV26D

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV26D
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 800V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
BYV26D
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 800V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
Set of 1
0.96£ VAT incl.
(0.80£ excl. VAT)
0.96£
Quantity in stock : 2116
BYV26E

BYV26E

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV26E
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
BYV26E
Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V
Set of 1
0.49£ VAT incl.
(0.41£ excl. VAT)
0.49£
Quantity in stock : 56
BYV27-200

BYV27-200

Housing: SOD-57. VRRM: 200V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. D...
BYV27-200
Housing: SOD-57. VRRM: 200V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.07V / 3A. Mounting Type: THT. Reverse Recovery Time (Max): 25ns. Series: BYV27
BYV27-200
Housing: SOD-57. VRRM: 200V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.07V / 3A. Mounting Type: THT. Reverse Recovery Time (Max): 25ns. Series: BYV27
Set of 1
1.34£ VAT incl.
(1.12£ excl. VAT)
1.34£
Quantity in stock : 61
BYV27-600

BYV27-600

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV27-600
Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V
BYV27-600
Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V
Set of 1
0.85£ VAT incl.
(0.71£ excl. VAT)
0.85£
Quantity in stock : 217
BYV28-200

BYV28-200

Forward current (AV): 3.5A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet):...
BYV28-200
Forward current (AV): 3.5A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Cj: 190pF. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V
BYV28-200
Forward current (AV): 3.5A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Cj: 190pF. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V
Set of 1
1.44£ VAT incl.
(1.20£ excl. VAT)
1.44£
Quantity in stock : 90
BYV28-600

BYV28-600

Forward current (AV): 3.1A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet):...
BYV28-600
Forward current (AV): 3.1A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 125pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra fast low-loss controlled avalanche rect.. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.93V
BYV28-600
Forward current (AV): 3.1A. IFSM: 90A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 125pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra fast low-loss controlled avalanche rect.. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--90A, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.93V
Set of 1
1.85£ VAT incl.
(1.54£ excl. VAT)
1.85£
Quantity in stock : 42
BYV29-500

BYV29-500

Forward current (AV): 9A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC (...
BYV29-500
Forward current (AV): 9A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). VRRM: 500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 50uA. MRI (min): 2uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 110Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V
BYV29-500
Forward current (AV): 9A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). VRRM: 500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 50uA. MRI (min): 2uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 110Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V
Set of 1
1.40£ VAT incl.
(1.17£ excl. VAT)
1.40£
Quantity in stock : 1606
BYV32E-200

BYV32E-200

Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO...
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V
Set of 1
1.19£ VAT incl.
(0.99£ excl. VAT)
1.19£
Quantity in stock : 115
BYV34-500-127

BYV34-500-127

Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-...
BYV34-500-127
Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB, SOT78. VRRM: 500V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Marking on the case: BYV34-500. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A t=10ms, 132A t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V
BYV34-500-127
Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB, SOT78. VRRM: 500V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Marking on the case: BYV34-500. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 120A t=10ms, 132A t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V
Set of 1
1.64£ VAT incl.
(1.37£ excl. VAT)
1.64£
Quantity in stock : 298
BYV38

BYV38

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV38
Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V
BYV38
Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V
Set of 1
0.62£ VAT incl.
(0.52£ excl. VAT)
0.62£
Quantity in stock : 68
BYV42E-150

BYV42E-150

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB (...
BYV42E-150
Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. Note: common cathode. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V
BYV42E-150
Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 150V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. Note: common cathode. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V
Set of 1
1.91£ VAT incl.
(1.59£ excl. VAT)
1.91£
Quantity in stock : 69
BYV42E-200

BYV42E-200

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB (...
BYV42E-200
Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. RoHS: yes. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V
BYV42E-200
Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. RoHS: yes. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V
Set of 1
1.93£ VAT incl.
(1.61£ excl. VAT)
1.93£
Quantity in stock : 519
BYV79E-200

BYV79E-200

Forward current (AV): 12.7A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220-...
BYV79E-200
Forward current (AV): 12.7A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220-2. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 150Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.83V
BYV79E-200
Forward current (AV): 12.7A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220-2. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 150Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.83V
Set of 1
1.68£ VAT incl.
(1.40£ excl. VAT)
1.68£
Quantity in stock : 154
BYW172D

BYW172D

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass...
BYW172D
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BYW172D
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
1.16£ VAT incl.
(0.97£ excl. VAT)
1.16£
Quantity in stock : 89
BYW178

BYW178

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass...
BYW178
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Semiconductor material: silicon. Note: GI S. Note: 80App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
BYW178
Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Semiconductor material: silicon. Note: GI S. Note: 80App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
1.27£ VAT incl.
(1.06£ excl. VAT)
1.27£

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