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Product categories :

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Semiconductors Diodes

Standard and Rectifier Diodes

Standard and Rectifier Diodes

30 v (1)

20V (4)

25V (1)

30V (9)

35V (2)

40V (35)

45V (15)

50V (5)

60V (24)

70V (3)

75V (9)

80V (3)

85V (2)

90V (4)

100V (46)

125V (1)

150V (6)

170V (1)

200V (54)

250V (4)

300V (5)

350V (1)

400V (20)

4.87k Ohms (1)

500V (5)

600V (48)

650V (1)

800V (20)

1000V (31)

1200V (19)

1300V (1)

1500V (14)

1600V (7)

2000V (3)

12000V (2)

16000V (1)

10A/diode (2)

120Ap / 8.3ms (1)

150Ap / 8.3ms (1)

2 X 3A (1)

2x123A (1)

2x91A (1)

2x96A (1)

400A (2x200A) (1)

40A (2x20A) (1)

50A / 10mS (1)

80A (tp=10ms) (1)

n/a (1)

0.07A (1)

0.1A (6)

0.115A (2)

0.125A (2)

0.15A (6)

0.2A (8)

0.215A (1)

0.25A (4)

0.3A (2)

3.3mA (1)

0.35A (3)

0.36A (1)

0.5A (5)

0.6A (2)

0.75A (1)

0.8A (3)

1A (71)

1.2A (3)

1.25A (1)

1.4A (1)

1.5A (5)

20mA (3)

2A (32)

2.3A (1)

2.5A (1)

3A (63)

3.1A (1)

3.5A (1)

40mA (1)

4A (8)

5A (28)

6A (9)

7.5A (4)

8A (17)

9A (1)

100mA (1)

10A (23)

11A (1)

12A (1)

12.7A (1)

130mA (1)

150mA (1)

15A (13)

15.9A (1)

16A (4)

200mA (6)

20A (13)

250mA (2)

25A (3)

27A (3)

28A (1)

300mA (1)

30A (29)

35A (6)

37A (2)

400mA (1)

40A (15)

45A (1)

500mA (7)

50A (23)

52A (1)

60A (10)

62A (9)

625mA (1)

70A (12)

75A (11)

80A (20)

88A (1)

90A (3)

100A (23)

110A (5)

125A (6)

130A (1)

150A (18)

165A (1)

180A (1)

200A (6)

220A (1)

250A (6)

255A (1)

265A (1)

270A (1)

275A (4)

280A (1)

300A (7)

350A (1)

375A (2)

400A (5)

500A (6)

550A (1)

570A (9)

600A (4)

800A (2)

880A (1)

900A (1)

1200A (7)

1500A (1)

1600A (1)

60.4k Ohms (6)

063 (1)

318–08, SOT–23 (TO–236AB) (1)

3x12mm (2)

425AB SMA (3.8x1.9mm) (1)

7.3x22mm (1)

CASE 59-10 (7.3x3.4mm) (1)

D-PAK (1)

D-PAK ( TO-252 ) (2)

D0-201AD ( 9.5x5.3mm ) CASE267–05 (1)

D0-201AD ( 9.5x5mm ) CASE267–03 (3)

D2PAK ( TO-263 ) (2)

DO-15 (17)

DO-15 ( 3.2x6.7mm ) (3)

DO-15 ( 3.2x7.2mm ) (4)

DO-15 ( 3.3x6.4mm ) (3)

DO-15 ( 3.5x7.5mm ) (1)

DO-15 ( 6.0x3.4mm ) (1)

DO-15 ( 6.3x3.0mm ) (2)

DO-15 ( 7.6x3.6mm ) (2)

DO-15 ( DO-204AC ) 6.35x3.0mm (1)

DO-201 (33)

DO-201 ( 4.5x7.5mm ) (2)

DO-201 ( 9.5x5.0mm ) (3)

DO-201AD (9)

DO-201AD ( 4.5x7.5mm ) (2)

DO-201AD ( 5.3x9.0mm ) (4)

DO-201AD ( 5.6x10mm ) (1)

DO-201AD ( 8.8x5.1mm ) (3)

DO-201AD ( 9.2x5.3mm ) (1)

DO-201AD ( 9.5x5.3mm ) (1)

DO-201AD 8x6mm (1)

DO-201AD DO-27 ( 5.2x9mm ) (1)

DO-203AB (13)

DO-203AB ( DO-5 ) (15)

DO-205 (1)

DO-205AC (1)

DO-213 (3)

DO-213AB ( 2.5x5mm ) (3)

DO-213AB (MELF) (2)

DO-214 (29)

DO-214AA (SMB) 4.57x3.94mm (1)

DO-214AB (SMA) 7.11x6.22mm (2)

DO-214AB (SMC) 7.11x6.22mm (2)

DO-214AC (1)

DO-214AC (SMA), 4.6x2.7mm (2)

DO-247 (2)

DO-27 (6)

DO-27 ( 9.2x5.2mm ) (4)

DO-27( 5.5x9.5mm ) (2)

DO-34 (1)

DO-34 ( 3.4x1.6mm ) (1)

DO-34 ( SOD68 ) (2)

DO-35 (11)

DO-35 ( 1.6x3.9mm ) (1)

DO-35 ( SOD27 ) (11)

DO-4 (2)

DO-41 (31)

DO-41 ( 2.5x4.8mm ) (2)

DO-41 ( 2.6x4.8mm ) (1)

DO-41 ( 2.6x4.9mm ) (1)

DO-41 ( 5.0x2.7mm ) (1)

DO-41 ( 5.2X2.7mm ) (4)

DO-41 ( 5.2x2.7 ) (1)

DO-41 ( DO-204AL ) (8)

DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ) (1)

DO-4P (2)

DO-5 (2)

DO-5P (2)

DO15 (4)

DO201 (3)

DO213AA (MiniMELF) (3)

DO213AB (MELF) (3)

DO214AA (SMB) (2)

DO214AB (SMC) (2)

DO214AC (SMA) (5)

DO220 (1)

DO35 (3)

DO41 (1)

Dpak-3 (1)

ISOPLUS247 (1)

ISOPLUS247 ( TO-247 ) (1)

ISOTOP ( SOT227B ) (6)

P-600 (1)

P600 (3)

P600 ( 8x7.5mm ) (1)

PCB soldering (1)

PCB soldering (SMD) (4)

POWERTAB (3)

R-6 (6)

R-6 ( 8.9x8.8mm ) (1)

R-6 ( 8x7.5mm ) (3)

R-6 ( 9.1x7.2mm ) (1)

R-6 ( 9.1x9.1mm ) (1)

R-6 ( 9x9mm ) (1)

SMA (1)

SMA (4.6x2.8 mm) (1)

SMA DO-214AC ( 4.6x3.83mm ) (2)

SMA DO214AC (1)

SMA DO214AC ( 4.5x2.79mm ) (1)

SMB ( 4.6x3.7x2.1mm ) (2)

SMB / DO214AA (1)

SMB CASE 403A-03 ( 4.32x3.56mm ) (1)

SMB DO-214AA (1)

SMB DO-214AB ( 4.3x3.6mm ) (2)

SMB DO-214AB ( 4.6x3.95mm ) (1)

SMB DO214AA (1)

SMB DO214AA ( 4.6x3.95mm ) (1)

SMC / DO214AB (1)

SMC CASE 403AC ( 7.15x6.25mm ) (5)

SMC DO-214AB ( 6.8x5.9mm ) (2)

SMD 0603 (1)

SMD 0805 (1)

SMD 1206 (1)

SOD-123 (3)

SOD-123FL (1)

SOD-323 (5)

SOD-323 ( 1.7x1.25mm ) (1)

SOD-323F (1)

SOD-57 (2)

SOD-57 ( Glass ) (11)

SOD-57 Glass (8)

SOD-57 Glass ( 4.5x3.6mm ) (1)

SOD-57 Glass passivated (2)

SOD-64 ( Glass ) (12)

SOD-64 Glass (11)

SOD-64 Glass ( 4.2x4.3mm ) (1)

SOD-80 ( 3.5x1.5mm ) (1)

SOD123 (3)

SOD123W SMA (2.9x1.9mm) (2)

SOD323 (1)

SOT-23 ( TO-236 ) (5)

SOT-23 ( TO236 ) (3)

SOT-23-3 (1)

SOT-323 (3)

SOT23 (3)

SOT323 (1)

SOT78 (TO-220AB) (1)

Sb (1)

T0-220AB (1)

T0-220FPAB (1)

TO-220 (63)

TO-220 CASE 221A (1)

TO-220-2 (1)

TO-220/2 (2)

TO-220A-2P (1)

TO-220AB (14)

TO-220AB ( SOT78 ) (4)

TO-220AB, SOT78 (1)

TO-220AC (25)

TO-220AC ( SOD59 ) (1)

TO-220AC-2 (1)

TO-220AC-2P (1)

TO-220AC-3P (4)

TO-220B (1)

TO-220F (8)

TO-220F-2L (3)

TO-220F-3 (1)

TO-220FP (17)

TO-220FP-3 (1)

TO-220FPAC (2)

TO-220L (1)

TO-240 (1)

TO-240AA (1)

TO-247 (24)

TO-247-2LD, CASE 340CL (1)

TO-247AC (1)

TO-247AC 3L (2)

TO-247AD (14)

TO-252 (1)

TO-252A ( Dpak ) (1)

TO-263 (2)

TO-3FP (1)

TO-3P (3)

TO-3P ( TO-218 SOT-93 ) (4)

TO-3PF (SOT399, 2-16E3A) (1)

TO218 (1)

TO220 (2)

TO220-3 (1)

TOP-3P (1)

TS-1 ( 2.5x3.3mm ) (1)

miniMELF (3)

silicon (2)

yes (4)

110pF (1)

12.7k Ohms (1)

532 products available

Products per page :

1 ...14 15 16 17 18 ...22

Quantity in stock : 99

RGP15J

RGP15J

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: si...

RGP15J

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

RGP15J

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Set of 1

0.67£ VAT incl.
(0.56£ excl. VAT)

0.67£

Quantity in stock : 41

RGP15M

RGP15M

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: s...

RGP15M

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

RGP15M

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting

Set of 1

0.70£ VAT incl.
(0.58£ excl. VAT)

0.70£

Quantity in stock : 49

RGP20B

RGP20B

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/...

RGP20B

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

RGP20B

Forward current (AV): 2A. VRRM: 100V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Set of 1

0.52£ VAT incl.
(0.43£ excl. VAT)

0.52£

Quantity in stock : 28

RGP20D

RGP20D

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/...

RGP20D

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

RGP20D

Forward current (AV): 2A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm

Set of 1

0.58£ VAT incl.
(0.48£ excl. VAT)

0.58£

Quantity in stock : 12

RGP30G

RGP30G

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S...

RGP30G

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S

RGP30G

Forward current (AV): 3A. VRRM: 400V. Semiconductor material: silicon. Note: 125A/PP. Note: GI, S

Set of 1

1.02£ VAT incl.
(0.85£ excl. VAT)

1.02£

Quantity in stock : 57

RGP30M

RGP30M

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V....

RGP30M

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

RGP30M

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Semiconductor material: silicon. Note: GI, S. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Set of 1

0.68£ VAT incl.
(0.57£ excl. VAT)

0.68£

Quantity in stock : 2

RH2F

RH2F

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4....

RH2F

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

RH2F

Forward current (AV): 1A. IFSM: 60A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.4x7.5mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--32169-301-670. Note: Samsung--CK6813Z/SEH. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Set of 1

3.77£ VAT incl.
(3.14£ excl. VAT)

3.77£

Quantity in stock : 2

RH4F

RH4F

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( ...

RH4F

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

RH4F

Forward current (AV): 2.5A. IFSM: 50A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V

Set of 1

4.28£ VAT incl.
(3.57£ excl. VAT)

4.28£

Out of stock

RHRP15120

RHRP15120

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-...

RHRP15120

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

RHRP15120

Forward current (AV): 15A. IFSM: 200A. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. VRRM: 1200V. Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Function: Hyperfast Diode. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Set of 1

3.17£ VAT incl.
(2.64£ excl. VAT)

3.17£

Quantity in stock : 86

RHRP8120

RHRP8120

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...

RHRP8120

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

RHRP8120

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 55 ns. Semiconductor material: silicon. Note: Hyper fast Diode. MRI (max): 500uA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3.2V. Forward voltage Vf (min): 2.6V

Set of 1

2.30£ VAT incl.
(1.92£ excl. VAT)

2.30£

Quantity in stock : 4

RL4Z

RL4Z

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5....

RL4Z

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

RL4Z

Forward current (AV): 3.5A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 5.2x8.0mm ). VRRM: 200V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultra-Fast Recovery Rectifier Diode. Pitch: 8x6.5mm. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V

Set of 1

2.29£ VAT incl.
(1.91£ excl. VAT)

2.29£

Quantity in stock : 173

RS2A

RS2A

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2A

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2A

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.60£ VAT incl.
(0.50£ excl. VAT)

0.60£

Quantity in stock : 139

RS2B

RS2B

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2B

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2B

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 100V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.61£ VAT incl.
(0.51£ excl. VAT)

0.61£

Quantity in stock : 191

RS2D

RS2D

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2D

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2D

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.66£ VAT incl.
(0.55£ excl. VAT)

0.66£

Quantity in stock : 92

RS2G

RS2G

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2G

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2G

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.83£ VAT incl.
(0.69£ excl. VAT)

0.83£

Quantity in stock : 174

RS2J

RS2J

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2J

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2J

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.83£ VAT incl.
(0.69£ excl. VAT)

0.83£

Quantity in stock : 79

RS2K

RS2K

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2K

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2K

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.83£ VAT incl.
(0.69£ excl. VAT)

0.83£

Quantity in stock : 74

RS2M

RS2M

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214...

RS2M

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

RS2M

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC ( 4.6x2.92 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: fast rectifying diode. Surface mount. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Set of 1

0.83£ VAT incl.
(0.69£ excl. VAT)

0.83£

Quantity in stock : 22

RURG80100

RURG80100

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2....

RURG80100

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V

RURG80100

Forward current (AV): 80A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247-2. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 125 ns. Semiconductor material: silicon. Function: Ultrafast Diode. MRI (max): 2mA. MRI (min): 250uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--500App 60Hz. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.7V

Set of 1

7.98£ VAT incl.
(6.65£ excl. VAT)

7.98£

Quantity in stock : 517

S16C40C

S16C40C

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB....

S16C40C

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V

S16C40C

Forward current (AV): 16A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 40V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Note: dual silicon diode. Note: Ifsm 150A/10ms. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.48V

Set of 1

0.68£ VAT incl.
(0.57£ excl. VAT)

0.68£

Quantity in stock : 5750

S1B

S1B

VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuratio...

S1B

VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S1

S1B

VRRM: 100V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: SMD. Reverse Leakage Current: <50uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S1

Set of 10

0.62£ VAT incl.
(0.52£ excl. VAT)

0.62£

Quantity in stock : 6435

S1M-FAI

S1M-FAI

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC...

S1M-FAI

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

S1M-FAI

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 1000V. Cj: 12pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.8us. Semiconductor material: silicon. Function: general purpose rectifier diodes. Note: screen printing/SMD code 1M. Note: housing 4.6x2.7mm. Marking on the case: 1 M. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Set of 10

1.08£ VAT incl.
(0.90£ excl. VAT)

1.08£

Quantity in stock : 3020

S2B

S2B

VRRM: 100V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuratio...

S2B

VRRM: 100V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S2

S2B

VRRM: 100V. Average Rectified Current per Diode: 2A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 100V. Reverse Recovery Time (Max): 1500ns. Series: S2

Set of 10

1.13£ VAT incl.
(0.94£ excl. VAT)

1.13£

Quantity in stock : 20

S2L20U

S2L20U

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon...

S2L20U

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon

S2L20U

Forward current (AV): 1.5A. VRRM: 200V. Semiconductor material: silicon

Set of 1

3.18£ VAT incl.
(2.65£ excl. VAT)

3.18£

Quantity in stock : 8569

S2M

S2M

Housing: yes. VRRM: 1000V. Average Rectified Current per Diode: 2A. Operating temperature range min ...

S2M

Housing: yes. VRRM: 1000V. Average Rectified Current per Diode: 2A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1.15V @ 2A. Series: S2. MSL: 5uA..100uA

S2M

Housing: yes. VRRM: 1000V. Average Rectified Current per Diode: 2A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.15V / 2A. Mounting Type: SMD. Reverse Leakage Current: <100uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1.15V @ 2A. Series: S2. MSL: 5uA..100uA

Set of 1

0.11£ VAT incl.
(0.09£ excl. VAT)

0.11£

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