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Semiconductors Diodes

RGP10G

RGP10G
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.54£ 0.65£
10 - 24 0.51£ 0.61£
25 - 49 0.49£ 0.59£
50 - 66 0.46£ 0.55£
Quantity U.P
1 - 9 0.54£ 0.65£
10 - 24 0.51£ 0.61£
25 - 49 0.49£ 0.59£
50 - 66 0.46£ 0.55£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 66
Set of 1

RGP10G. Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--30Ap t=8.3mS. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 17642
UF4007

UF4007

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Sem...
UF4007
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
UF4007
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
Set of 10
1.09£ VAT incl.
(0.91£ excl. VAT)
1.09£
Quantity in stock : 737
RGP10J

RGP10J

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£

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Quantity in stock : 499
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UA7809-ST

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BOX-KM33B

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LED5-W-16000

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BY133

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1N4002

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CEL470UF35V

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DC voltage: 35V. Capacitance: 470uF. Diameter: 10mm. Lifespan: 2000 hours. Lenght: 16mm. Configurati...
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