Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 100V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.79V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap 50Hz 8.2ms

Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 4.5x7.5mm ). VRRM: 200V. Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 6mA. MRI (min): 0.001mA. Marking on the case: SB3200. Equivalents: Vishay--VSB3200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.68V. Number of terminals: 2. Spec info: IFSM--80Ap 50Hz 8.3ms

Housing: DO201. Assembly/installation: THT. Max reverse voltage: 40V. Conditioning: Ammo Pack

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 4.5x7.5mm ). VRRM: 90V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.79V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap 50Hz 8.2ms

RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): Schottky rectifier diode. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 5A. Ifsm [A]: 310A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 0.6mA. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.79V @ 5A

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 150V. Cj: 150pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 50mA. MRI (min): 8uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 0.92V. Forward voltage Vf (min): 0.92V. Number of terminals: 2. Quantity per case: 1. Spec info: 125Ap

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 200V. Cj: 120pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 0.5mA. MRI (min): 0.1mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.9V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 40V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 50V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.67V. Forward voltage Vf (min): 0.67V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 125Ap (t=10ms)

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Forward current [A]: 2x10A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 300uA..7mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.85V @ 10A. Component family: dual Schottky rectifier diode

Forward current (AV): 30A. IFSM: 275A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Cj: 700pF. Conditioning: plastic tube. Dielectric structure: common cathode. Semiconductor material: Sb. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. Quantity per case: 2. Number of terminals: 3. Note: SMPS DIODE. Note: Ifsm--275A/8.3mS 60Hz. Conditioning unit: 30. Note: dual silicon diode. Spec info: Schottky rectifier diode

Forward current (AV): 30A. IFSM: 300A. Housing: P-600. Housing (according to data sheet): P600 ( 8x7.5mm ). VRRM: 40V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. MRI (max): 10mA. MRI (min): 0.3mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.42V. Forward voltage Vf (min): 0.25V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap T=10mS 50Hz

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Note: GI, S. Quantity per case: 1

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 200V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. Spec info: Ifsm--75App/8.3mS

Forward current (AV): 2A. IFSM: 75A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.5x7.5mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: SUPER FAST RECTIFIER. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.25V. Spec info: Ifsm--75App/8.3mS

Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 300V. Semiconductor material: silicon. Note: SUPER FAST RECTIFIER. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 6A. IFSM: 150A. Housing: R-6. Housing (according to data sheet): R-6 (9.1x9.1mm). VRRM: 600V. Cj: 80pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap/8.3ms

RoHS: yes. Component family: Silicon Schottky rectifier diode. Housing: PCB soldering (SMD). Housing: miniMELF. Housing (JEDEC standard): SOD-80. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 10A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 0.5mA..5mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.5V @ 1A

Housing: PCB soldering (SMD). Housing: SMB. Housing (JEDEC standard): DO-214AA. Forward current [A]: 2A. RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 55A. Forward voltage Vfmax (V): 0.85V @ 2A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 500uA..10mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). VRRM: 40V. Semiconductor material: Sb. MRI (max): 10mA. Marking on the case: SK24A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. Number of terminals: 2. Note: screen printing/SMD code SK24A. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMA DO-214AC ( 4.6x3.83mm ). VRRM: 60V. Semiconductor material: Sb. MRI (max): 10mA. Marking on the case: SK26A. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.7V. Forward voltage Vf (min): 0.7V. Number of terminals: 2. Note: screen printing/SMD code SK24A. Spec info: Vf 0.5V/2A, IFSM 50App 8.3ms

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SMC. Housing (JEDEC standard): DO-214AB. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 100A. Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 500uA..20mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.75V @ 3A

Forward current (AV): 5A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 100V. Cj: 200pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. MRI (max): 1mA. MRI (min): 100uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.85V. Number of terminals: 2. Other name: SK510C. Marking on the case: SK510. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms)

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: SOD-123FL. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 1A. Ifsm [A]: 22A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 200uA..2mA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.55V @ 1A

Forward current (AV): 165A. IFSM: 2500A. Housing: DO-205. Housing (according to data sheet): DO-205. VRRM: 1200V. Dielectric structure: casing connected to the anode. Semiconductor material: silicon. Function: All-purpose power rectifier. Assembly/installation: Threaded fastening. Operating temperature: -40...+180°C. Threshold voltage Vf (max): 1.5V. Note: M12 thread, 8.2mm eyelet. Used for: can also be used for solar panel systems. Quantity per case: 1. Number of terminals: 1. Spec info: Threaded housing--Anode, (high current)