Standard and Rectifier Diodes

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V

Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.05V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMB DO-214AB ( 4.6x3.95mm ). VRRM: 600V. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Note: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3J. MRI (max): 250uA. MRI (min): 10uA. Equivalents: MURS360T3G, MUR360S, R6. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.88V

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes

Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: 110pF. Average Rectified Current per Diode: 20A. Spec info: IFSM--500Ap 50Hz(t=10ms), 550Ap 60Hz(t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.87V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): 1500 ns. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns. Information: P2000M. Series: 2. MSL: yes

VRRM: 1600V. Average Rectified Current per Diode: 25A. Diode type: rectifier diode. Diode Configuration: independent. Mounting Type: THT. Reverse Recovery Time (Max): 1500ns

Housing: P600. VRRM: 200V. Average Rectified Current per Diode: 6A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 200V. Reverse Recovery Time (Max): 1500ns. Series: P600

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 9x9mm ). VRRM: 800V. Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: 6A08. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.9V

Housing (according to data sheet): R-6 ( 9.1x9.1mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 6A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Switching speed (regeneration time) tr [sec.]: IFSM--400Ap (t=8.3ms). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.0V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: 1V @ 5A. Series: P600. MSL: 10uA

Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V

Forward current (AV): 1A. IFSM: 10A. Housing: SOD-323. Housing (according to data sheet): SOD-323F. VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Schottky rectifier diode (Mega series). Marking on the case: EQ. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.66V. Forward voltage Vf (min): 0.21V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.7x5.0mm ). VRRM: 400V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: IFSM--50App, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V

IFSM: 30A. Housing (according to data sheet): A-405 (5.2x2.7mm). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Note: DAEWOO TV

Note: SONY TV

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. VRRM: 350V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Fast switching, Fast recovery diode. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFMS 100Ap. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 530V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Number of terminals: 3. RoHS: yes. Spec info: Silicon epitaxial planer. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.65V

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). VRRM: 70V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100us. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 2V

Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V

Forward current (AV): 3A. IFSM: 80A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 200V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V

Forward current (AV): 0.5A. IFSM: 20A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). VRRM: 2000V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--20Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Note: GI, S. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting