Electronic components and equipment, for businesses and individuals

RGP10D

RGP10D
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 49 0.15£ 0.18£
50 - 99 0.15£ 0.18£
100 - 195 0.14£ 0.17£
Quantity U.P
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 49 0.15£ 0.18£
50 - 99 0.15£ 0.18£
100 - 195 0.14£ 0.17£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 195
Set of 1

RGP10D. Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS. Quantity in stock updated on 21/04/2025, 01:25.

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Quantity in stock : 737
RGP10J

RGP10J

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£
Quantity in stock : 66
RGP10G

RGP10G

Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( ...
RGP10G
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--30Ap t=8.3mS
RGP10G
Forward current (AV): 1A. IFSM: 30A. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.65£ VAT incl.
(0.54£ excl. VAT)
0.65£

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