MBRD835LG
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 0.87£ | 1.04£ |
| 5 - 9 | 0.83£ | 1.00£ |
| 10 - 24 | 0.80£ | 0.96£ |
| 25 - 49 | 0.79£ | 0.95£ |
| 50 - 84 | 0.77£ | 0.92£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 0.87£ | 1.04£ |
| 5 - 9 | 0.83£ | 1.00£ |
| 10 - 24 | 0.80£ | 0.96£ |
| 25 - 49 | 0.79£ | 0.95£ |
| 50 - 84 | 0.77£ | 0.92£ |
Delivery in 2-3 days, with postal tracking!
MBRD835LG. Forward current (AV): 8A. IFSM: 75A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): Dpak-3. VRRM: 35V. Function: 'High Voltage Power Schottky'. MRI (max): 35mA. MRI (min): 1.4mA. Marking on the case: 853LG. RoHS: yes. Schottky diode?: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.51V. Forward voltage Vf (min): 0.41V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 10/07/2025, 01:25.
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