Standard and Rectifier Diodes

Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C

Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C

Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 357W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1080Ap t=10ms, TVJ=150°C

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Pd (Power Dissipation, Max): 138W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Forward current (AV): 28A. IFSM: 200A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Pd (Power Dissipation, Max): 138W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2.2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Forward current (AV): 60A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Pd (Power Dissipation, Max): 189W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.8V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 450Ap t=10ms, TVJ=150°C

Forward current (AV): 52A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Pd (Power Dissipation, Max): 189W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 450Ap t=10ms, TVJ=150°C

Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: yes. Conditioning: plastic tube. Conditioning unit: 25. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Double: yes. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 100uA. MRI (min): 50uA. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm--375Ap Tp--10uS

Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 0.5mA. MRI (min): 100uA. Pd (Power Dissipation, Max): 95W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.75V. Forward voltage Vf (min): 1.79V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: 90Ap t=10ms, TVJ=45°C

Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 500Ap t=10ms, TVJ=45°C

Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V. Conditioning unit: 10. Number of terminals: 2. Configuration: insulated housing, without drilling. Quantity per case: 1. Spec info: 540Ap t=10ms, TVJ=45°C

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V. Quantity per case: 2. Number of terminals: 3. Spec info: central leg (cathode D1, anode D2, in series)

Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1500V. Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. MRI (max): 1mA. MRI (min): 100uA. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V. Number of terminals: 2

Forward current (AV): 15A. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 1500V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Note: IF(AV) 4A, Vf typ 1.5V. Note: High Voltage Damper Diode

Forward current (AV): 5A. IFSM: 75A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 130 ns. Semiconductor material: silicon. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--75Ap T=10mS

Forward current (AV): 0.8A. VRRM: 200V. Semiconductor material: silicon. Note: SPEC.SONY DIODA. Note: SONY 871904678

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x4.9mm ). VRRM: 100V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2. Note: 30Ap/8.3ms. Note: High Efficiency Rectifiers

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 100V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2. Note: Gl, S. Note: 75Ap/8.3ms

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 300V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 400V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 400V. Cj: 100pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra Fast Diode. Note: Gl, S. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. Spec info: 150Ap / 8.3ms

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2x2.7 ). VRRM: 1600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: 30Ap

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB / DO214AA. VRRM: 600V. Cj: 15pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V