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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

531 products available
Products per page :
Quantity in stock : 9
D8025L

D8025L

Forward current (AV): 25A. IFSM: 350A. Housing: TO-220. Housing (according to data sheet): TO-220AB ...
D8025L
Forward current (AV): 25A. IFSM: 350A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: trr 4us (IF=0.9A, IR=1.5A). Note: cathode (1), anode (2), not connected (3). Note: insulated TO220 package. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: 350Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V
D8025L
Forward current (AV): 25A. IFSM: 350A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: trr 4us (IF=0.9A, IR=1.5A). Note: cathode (1), anode (2), not connected (3). Note: insulated TO220 package. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: 350Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V
Set of 1
4.19£ VAT incl.
(3.49£ excl. VAT)
4.19£
Quantity in stock : 3
DA204U

DA204U

Forward current (AV): 0.2A. Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V....
DA204U
Forward current (AV): 0.2A. Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V. Double: Double. Semiconductor material: silicon. Note: Ultra High Speed Switching. Note: screen printing/CMS code UMD3. Marking on the case: UMD3. Assembly/installation: surface-mounted component (SMD)
DA204U
Forward current (AV): 0.2A. Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V. Double: Double. Semiconductor material: silicon. Note: Ultra High Speed Switching. Note: screen printing/CMS code UMD3. Marking on the case: UMD3. Assembly/installation: surface-mounted component (SMD)
Set of 1
0.98£ VAT incl.
(0.82£ excl. VAT)
0.98£
Quantity in stock : 82
DD1200

DD1200

Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 12000V. Cj...
DD1200
Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 12000V. Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1
DD1200
Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 12000V. Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1
Set of 1
0.82£ VAT incl.
(0.68£ excl. VAT)
0.82£
Quantity in stock : 78
DD16000

DD16000

Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 16000V. Cj...
DD16000
Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 16000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Number of terminals: 2. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V
DD16000
Forward current (AV): 20mA. IFSM: 500mA. Housing (according to data sheet): 3x12mm. VRRM: 16000V. Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. MRI (min): 5uA. Number of terminals: 2. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V
Set of 1
1.07£ VAT incl.
(0.89£ excl. VAT)
1.07£
Quantity in stock : 766
DD54RC

DD54RC

Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V...
DD54RC
Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Semiconductor material: silicon. Note: Ultrahigh-Definition Display Applications. Note: 50App/10ms, Silicon Diffused Junction Type. Assembly/installation: PCB through-hole mounting
DD54RC
Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Semiconductor material: silicon. Note: Ultrahigh-Definition Display Applications. Note: 50App/10ms, Silicon Diffused Junction Type. Assembly/installation: PCB through-hole mounting
Set of 1
0.66£ VAT incl.
(0.55£ excl. VAT)
0.66£
Quantity in stock : 51
DF20LC30

DF20LC30

Forward current (AV): 20A. IFSM: 180A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet):...
DF20LC30
Forward current (AV): 20A. IFSM: 180A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. VRRM: 300V. Cj: 90pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Marking on the case: 20LC30. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFSM--180Ap (1cycle). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1V
DF20LC30
Forward current (AV): 20A. IFSM: 180A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. VRRM: 300V. Cj: 90pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Marking on the case: 20LC30. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: IFSM--180Ap (1cycle). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1V
Set of 1
1.15£ VAT incl.
(0.96£ excl. VAT)
1.15£
Out of stock
DGP-30

DGP-30

Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201AD. ...
DGP-30
Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1500V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20us. Semiconductor material: silicon. Function: DIODE-RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: DGP30L. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
DGP-30
Forward current (AV): 3A. IFSM: 100A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1500V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20us. Semiconductor material: silicon. Function: DIODE-RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: DGP30L. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
2.71£ VAT incl.
(2.26£ excl. VAT)
2.71£
Quantity in stock : 80
DMV1500HD

DMV1500HD

Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Double: Double. Semicon...
DMV1500HD
Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
DMV1500HD
Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
Set of 1
3.80£ VAT incl.
(3.17£ excl. VAT)
3.80£
Quantity in stock : 65
DMV1500M

DMV1500M

Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Double: Double. Semicondu...
DMV1500M
Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
DMV1500M
Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
Set of 1
4.80£ VAT incl.
(4.00£ excl. VAT)
4.80£
Quantity in stock : 68
DSEI12-12A

DSEI12-12A

Forward current (AV): 11A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
DSEI12-12A
Forward current (AV): 11A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 78W. RoHS: yes. Spec info: 75Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.6V. Forward voltage Vf (min): 2.2A
DSEI12-12A
Forward current (AV): 11A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 78W. RoHS: yes. Spec info: 75Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.6V. Forward voltage Vf (min): 2.2A
Set of 1
2.36£ VAT incl.
(1.97£ excl. VAT)
2.36£
Quantity in stock : 24
DSEI120-12A

DSEI120-12A

Forward current (AV): 100A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AD...
DSEI120-12A
Forward current (AV): 100A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 20mA. MRI (min): 1.5mA. Number of terminals: 2. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.55V
DSEI120-12A
Forward current (AV): 100A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 20mA. MRI (min): 1.5mA. Number of terminals: 2. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.55V
Set of 1
16.57£ VAT incl.
(13.81£ excl. VAT)
16.57£
Quantity in stock : 3
DSEI2X101-06A

DSEI2X101-06A

Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sh...
DSEI2X101-06A
Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V
DSEI2X101-06A
Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V
Set of 1
32.77£ VAT incl.
(27.31£ excl. VAT)
32.77£
Out of stock
DSEI2X101-12A

DSEI2X101-12A

Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data she...
DSEI2X101-12A
Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: dual fast recovery diode. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Spec info: 810Ap t=10ms, TVJ=150°C. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V
DSEI2X101-12A
Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: dual fast recovery diode. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Spec info: 810Ap t=10ms, TVJ=150°C. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V
Set of 1
57.32£ VAT incl.
(47.77£ excl. VAT)
57.32£
Quantity in stock : 8
DSEI2X121-02A

DSEI2X121-02A

Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data s...
DSEI2X121-02A
Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V
DSEI2X121-02A
Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V
Set of 1
44.87£ VAT incl.
(37.39£ excl. VAT)
44.87£
Quantity in stock : 24
DSEI30-06A

DSEI30-06A

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEI30-06A
Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V
DSEI30-06A
Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V
Set of 1
4.75£ VAT incl.
(3.96£ excl. VAT)
4.75£
Quantity in stock : 41
DSEI30-10A

DSEI30-10A

Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEI30-10A
Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 2V
DSEI30-10A
Forward current (AV): 37A. IFSM: 375A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 2V
Set of 1
5.59£ VAT incl.
(4.66£ excl. VAT)
5.59£
Quantity in stock : 79
DSEI30-12A

DSEI30-12A

Forward current (AV): 28A. IFSM: 200A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEI30-12A
Forward current (AV): 28A. IFSM: 200A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2.2V
DSEI30-12A
Forward current (AV): 28A. IFSM: 200A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 138W. RoHS: yes. Spec info: 375Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2.2V
Set of 1
5.38£ VAT incl.
(4.48£ excl. VAT)
5.38£
Quantity in stock : 30
DSEI60-10A

DSEI60-10A

Forward current (AV): 60A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEI60-10A
Forward current (AV): 60A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.8V
DSEI60-10A
Forward current (AV): 60A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.8V
Set of 1
7.99£ VAT incl.
(6.66£ excl. VAT)
7.99£
Quantity in stock : 44
DSEI60-12A

DSEI60-12A

Forward current (AV): 52A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEI60-12A
Forward current (AV): 52A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2V
DSEI60-12A
Forward current (AV): 52A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Number of terminals: 2. Pd (Power Dissipation, Max): 189W. RoHS: yes. Spec info: 450Ap t=10ms, TVJ=150°C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2V
Set of 1
8.26£ VAT incl.
(6.88£ excl. VAT)
8.26£
Quantity in stock : 67
DSEK60-06A

DSEK60-06A

Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEK60-06A
Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: yes. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Double: yes. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 100uA. MRI (min): 50uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Ifsm--375Ap Tp--10uS. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V
DSEK60-06A
Forward current (AV): 30A. IFSM: 300A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 600V. Cj: yes. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Double: yes. Semiconductor material: silicon. Function: 'Fast Recovery'. MRI (max): 100uA. MRI (min): 50uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: Ifsm--375Ap Tp--10uS. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V
Set of 1
9.58£ VAT incl.
(7.98£ excl. VAT)
9.58£
Quantity in stock : 63
DSEP12-12A

DSEP12-12A

Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
DSEP12-12A
Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 0.5mA. MRI (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 95W. RoHS: yes. Spec info: 90Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.75V. Forward voltage Vf (min): 1.79V
DSEP12-12A
Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 0.5mA. MRI (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 95W. RoHS: yes. Spec info: 90Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.75V. Forward voltage Vf (min): 1.79V
Set of 1
3.17£ VAT incl.
(2.64£ excl. VAT)
3.17£
Quantity in stock : 27
DSEP60-12A

DSEP60-12A

Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD....
DSEP60-12A
Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 500Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V
DSEP60-12A
Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 500Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V
Set of 1
11.56£ VAT incl.
(9.63£ excl. VAT)
11.56£
Quantity in stock : 33
DSEP60-12AR

DSEP60-12AR

Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sh...
DSEP60-12AR
Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Configuration: insulated housing, without drilling. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V
DSEP60-12AR
Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Configuration: insulated housing, without drilling. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V
Set of 1
14.10£ VAT incl.
(11.75£ excl. VAT)
14.10£
Out of stock
DSP25-16AR

DSP25-16AR

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Quantity per case: 2. Die...
DSP25-16AR
Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. Number of terminals: 3. RoHS: yes. Spec info: central leg (cathode D1, anode D2, in series). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V
DSP25-16AR
Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. Number of terminals: 3. RoHS: yes. Spec info: central leg (cathode D1, anode D2, in series). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V
Set of 1
17.59£ VAT incl.
(14.66£ excl. VAT)
17.59£
Quantity in stock : 38
DTV1500HD

DTV1500HD

Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing ...
DTV1500HD
Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1500V. Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. MRI (max): 1mA. MRI (min): 100uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V
DTV1500HD
Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1500V. Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. MRI (max): 1mA. MRI (min): 100uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V
Set of 1
2.82£ VAT incl.
(2.35£ excl. VAT)
2.82£

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