PNP bipolar transistors

NPN-Transistor, 0.5A, 40V. Collector current: 0.5A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.5W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-92, 65V/60V, 300mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 65V/60V. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.5W

NPN-Transistor, 2.5A, 35V. Collector current: 2.5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 160 MHz. Function: Low-Frequency Power Amplifier. Note: Silicon PNP Epitaxial. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Spec info: complementary transistor (pair)

NPN-Transistor, PCB soldering, TO-92, 30V/25V, 500mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, PCB soldering, TO-92, 55V, 50mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 55V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.15W

NPN-Transistor, PCB soldering, TO-92, 35V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, 70V/50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 70V/50V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 15W

NPN-Transistor, PCB soldering, D18/C, 80V, 500mA. Housing: PCB soldering. Housing: D18/C. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 1W

NPN-Transistor, PCB soldering, D35/B, 150V, 50mA. Housing: PCB soldering. Housing: D35/B. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, PCB soldering, D35/B, 20V/15V, 200mA. Housing: PCB soldering. Housing: D35/B. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, PCB soldering, TO-126, 100V, 500mA. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 5W

NPN-Transistor, 0.05A, 80V. Collector current: 0.05A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.15W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-92, 30V/20V, 30mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.25W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 0.03A. Operating temperature range min (°C): PNP. Operating temperature range max (°C): 30 v

NPN-Transistor, 1A, 40V. Collector current: 1A. Collector/emitter voltage Vceo: 40V. Resistor B: no. BE diode: PNP bipolar transistor. BE resistor: PCB soldering. C(in): D8A/C. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.6W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, 45V/35V, 1A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 45V/35V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 5W

NPN-Transistor, PCB soldering, TO-92, 90V, 50mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, 1A, 20V. Collector current: 1A. Collector/emitter voltage Vceo: 20V. Resistor B: no. BE diode: PNP bipolar transistor. BE resistor: PCB soldering. C(in): TO-126. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 4W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-92, 90V, 50mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.05A, TO-92, TO-92L, 160V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, D18/C, 40V/32V, 1A. Housing: PCB soldering. Housing: D18/C. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.75W

NPN-Transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2073. BE diode: no. CE diode: no

NPN-Transistor, 0.05A, TO-92, TO-92, 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: audio/video. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: 9mm height

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: PCT Process. Max hFE gain: 240. Minimum hFE gain: 80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2235-Y. BE diode: no. CE diode: no

NPN-Transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Function: Low noise, Audio amplifier. Spec info: complementary transistor (pair) 2SC2240. BE diode: no. CE diode: no