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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.05A, TO-92, TO-92L, 160V - 2SA916

NPN-Transistor, 0.05A, TO-92, TO-92L, 160V - 2SA916
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.09£ 1.31£
5 - 9 1.04£ 1.25£
10 - 24 1.00£ 1.20£
25 - 49 0.98£ 1.18£
50 - 99 0.92£ 1.10£
100 - 100 0.88£ 1.06£
Quantity U.P
1 - 4 1.09£ 1.31£
5 - 9 1.04£ 1.25£
10 - 24 1.00£ 1.20£
25 - 49 0.98£ 1.18£
50 - 99 0.92£ 1.10£
100 - 100 0.88£ 1.06£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 100
Set of 1

NPN-Transistor, 0.05A, TO-92, TO-92L, 160V - 2SA916. NPN-Transistor, 0.05A, TO-92, TO-92L, 160V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Nec. Quantity in stock updated on 24/07/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 20777
BF421

BF421

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (accordin...
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
Set of 10
1.12£ VAT incl.
(0.93£ excl. VAT)
1.12£

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