PNP bipolar transistors

NPN-Transistor, 1.5A, 35V. Collector current: 1.5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, 50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 20W

NPN-Transistor, PCB soldering, M17/J, 90V/80V, 800mA. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, PCB soldering, TO-92, 20V/15V, 500mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, PCB soldering, D17/C, 25V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SD468. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 25V

NPN-Transistor, 0.1A, SC-71, 60V. Collector current: 0.1A. Housing: SC-71. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP

NPN-Transistor, PCB soldering, D8/C, 30V/25V, 500mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.6W

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SD667. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 27pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SD669A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SD718. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN-Transistor, 7A, 170V. Collector current: 7A. Collector/emitter voltage Vceo: 170V. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, 80V/60V, 7A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 7A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 40W

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), MINI MOLD, 25V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 2.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Spec info: complementary transistor (pair) 2SD601. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering, D8/C, 35V, 50mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, PCB soldering, D17/C, 60V/50V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W

NPN-Transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 40V. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Pd (Power Dissipation, Max): 10W. Spec info: complementary transistor (pair) 2SD882. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 12A, TO-3PN, 160V. Collector current: 12A. Housing: TO-3PN. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SD1047. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, TO-220, TO-220, 50V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) 2SD1133. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 70V

NPN-Transistor, 2A, TO-220, TO-220AB, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Resistor B: 10. BE diode: no. BE resistor: 47. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: PNP transistor. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD1138. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 3V

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 560. Minimum hFE gain: 100. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) 2SD1207. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V

NPN-Transistor, PCB soldering, TO-92, 45V/40V, 300mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 45V/40V. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.5W

NPN-Transistor, PCB soldering, TO-126, 80V, 1A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: A743. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor. Quantity per case: 1