PNP bipolar transistors

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Max hFE gain: 5000. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 160V. Spec info: complementary transistor (pair) 2SD2390

NPN-Transistor, 10A, TO-3PN ( 2-16C1B ), TO-3PN ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN ( MT-100 ). Collector/emitter voltage Vceo: 150V. Darlington transistor?: 1. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Ic(pulse): A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2390. BE diode: no. CE diode: no

NPN-Transistor, 3A, TO-220FP, TO-220F, 80V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: NF-L. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD2394

NPN-Transistor, 12A, 150V. Collector current: 12A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Pd (Power Dissipation, Max): 150W. Type of transistor: PNP. Vcbo: 160V. Spec info: complementary transistor (pair) 2SD2401

NPN-Transistor, 8A, TO-3PF, 160V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD2438

NPN-Transistor, 10A, TO-3PF, 160V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD2439

NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P ( SOT-93 ), 110V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD2495

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Function: HI-FI Audio Power amplifier and Regulator. Spec info: complementary transistor (pair) 2SD2560

NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. Cost): 100pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2589. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-1, 30 v, 100mA. Housing: PCB soldering. Housing: TO-1. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.125W

NPN-Transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: GE. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, 35V, 1.5A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, 1.5A, 35V. Collector current: 1.5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, 50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 20W

NPN-Transistor, PCB soldering, M17/J, 90V/80V, 800mA. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, PCB soldering, M17/J, 40V/20V, 2A. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 40V/20V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, PCB soldering, TO-92, 20V/15V, 500mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, PCB soldering, D17/C, 25V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 25V. Spec info: complementary transistor (pair) 2SD468

NPN-Transistor, 0.1A, SC-71, 60V. Collector current: 0.1A. Housing: SC-71. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP

NPN-Transistor, PCB soldering, D8/C, 30V/25V, 500mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.6W

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no

NPN-Transistor, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Housing: TO-126 (TO-225, SOT-32). Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. BE diode: no. CE diode: no