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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.05A, TO-92, TO-92, 150V - 2SA949

NPN-Transistor, 0.05A, TO-92, TO-92, 150V - 2SA949
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.72£ 2.06£
5 - 9 1.63£ 1.96£
10 - 23 1.58£ 1.90£
Quantity U.P
1 - 4 1.72£ 2.06£
5 - 9 1.63£ 1.96£
10 - 23 1.58£ 1.90£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 1

NPN-Transistor, 0.05A, TO-92, TO-92, 150V - 2SA949. NPN-Transistor, 0.05A, TO-92, TO-92, 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: audio/video. Pd (Power Dissipation, Max): 0.8W. Spec info: 9mm height. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Toshiba. Quantity in stock updated on 24/07/2025, 03:25.

Equivalent products :

Quantity in stock : 20777
BF421

BF421

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (accordin...
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
Set of 10
1.12£ VAT incl.
(0.93£ excl. VAT)
1.12£
Quantity in stock : 7
2SA1123

2SA1123

NPN-Transistor, 50mA, TO-92, TO-92, 150V. Collector current: 50mA. Housing: TO-92. Housing (accordin...
2SA1123
NPN-Transistor, 50mA, TO-92, TO-92, 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
2SA1123
NPN-Transistor, 50mA, TO-92, TO-92, 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
1.02£ VAT incl.
(0.85£ excl. VAT)
1.02£

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MJE15032G

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