PNP bipolar transistors

NPN-Transistor, 0.5A, 400V. Collector current: 0.5A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: NF/S. Pd (Power Dissipation, Max): 0.75W. Type of transistor: PNP. Spec info: TO-92M (hauteur 9mm)

NPN-Transistor, 2A, 400V. Collector current: 2A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: NF-S. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP

NPN-Transistor, 2A, TO-220FP, TO-220F, 150V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: TV-NF-L. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC4381

NPN-Transistor, 2A, TO-220FP, FM20 (TO220F), 200V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): FM20 (TO220F). Collector/emitter voltage Vceo: 200V. Cost): 60pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: High voltage PNP transistor for audio and general purpose applications.. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 200V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC4382. BE diode: no. CE diode: no

NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P, 80V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: NF-L. Minimum hFE gain: 50. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) 2SC4466

NPN-Transistor, 2A, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 50V. Collector current: 2A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( MTP3 ). Collector/emitter voltage Vceo: 50V. Cost): 36pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF, lo-sat. Max hFE gain: 270. Minimum hFE gain: 120. Ic(pulse): 5A. Marking on the case: AG*. Equivalents: LG 0TRRH80034A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC4672. BE diode: no. CE diode: no

NPN-Transistor, 1A, TO-220FP, 2-10R1A, 230V. Collector current: 1A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 230V. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-L. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 230V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC4793. BE diode: no. CE diode: no

NPN-Transistor, 2A, TO-220FP, TO-220F, 180V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 180V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: TV, SL. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SC5171. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 10A, TO-3PN ( 2-16C1B ), 2-16C1A, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 140V. Cost): 320pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1941. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 140V. Saturation voltage VCE(sat): 0.8V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5198. BE diode: no. CE diode: no

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no

NPN-Transistor, -230V, -15A. Collector-Emitter Voltage VCEO: -230V. Collector current: -15A. Type of transistor: PNP transistor. Polarity: PNP. Function: HI-FI Power Amplifier. Max frequency: 30 MHz

NPN-Transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 230V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 25 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Function: NF-HI-FI. Spec info: complementary transistor (pair) 2SC5242. BE diode: no. CE diode: no

NPN-Transistor, 15A, 230V. Collector current: 15A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC5359

NPN-Transistor, 8A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 50V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: DC-DC converter, TFT power supply. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC5707

NPN-Transistor, 8A, D-PAK ( TO-252 ), TO-252AA ( DPAK ), 50V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: DC-DC converter, TFT power supply. Ic(pulse): 11A. Pd (Power Dissipation, Max): 15W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC5707

NPN-Transistor, 20A, TO-220FP, TO-220F-3SG, 50V. Collector current: 20A. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3SG. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 400. Minimum hFE gain: 150. Ic(pulse): 25A. Marking on the case: A2210. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Vebo: 6V. Function: Relay drivers, lamp drivers, motor drivers. Spec info: complementary transistor (pair) 2SC6082. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-1, 20V, 10mA. Housing: PCB soldering. Housing: TO-1. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 10mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.05W

NPN-Transistor, 0.4A, 40V. Collector current: 0.4A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-98, 35V/30V, 100mA. Housing: PCB soldering. Housing: TO-98. Collector-emitter voltage Uceo [V]: 35V/30V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.4A, 30 v. Collector current: 0.4A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: general purpose. Note: hFE 70...140. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Spec info: 2SA562-O

NPN-Transistor, 0.4A, 30 v. Collector current: 0.4A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: general purpose. Note: hFE 120...240. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Spec info: KTA562-Y

NPN-Transistor, PCB soldering, TO-18, 60V/40V, 200mA. Housing: PCB soldering. Housing: TO-18. Collector-emitter voltage Uceo [V]: 60V/40V. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, 0.15A, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Collector/emitter voltage Vceo: 50V. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 560. Minimum hFE gain: 160. Id(imp): 0.4A. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 6V. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-92, 30V/25V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.15W

NPN-Transistor, PCB soldering, TO-92, 60V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.15W