PNP bipolar transistors

NPN-Transistor, 0.5A, TO-92, TO-92, 60V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, TO-220, TO-220, 120V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2275

NPN-Transistor, PCB soldering, TO-92, 60V/50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor, 0.2A, TO-92, TO-92, 50V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, 40V/32V, 2A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W

NPN-Transistor, PCB soldering, TO-126, 120V, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 8W

NPN-Transistor, PCB soldering, M10/J, 100V, 4A. Housing: PCB soldering. Housing: M10/J. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 40W

NPN-Transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Function: High-Current Switching, low-saturation voltage. Spec info: complementary transistor (pair) 2SD1623S. BE diode: no. CE diode: no

NPN-Transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Spec info: complementary transistor (pair) 2SD1623T. BE diode: no. CE diode: no

NPN-Transistor, 1A, SOT-89, SOT-89 (SC-62), 32V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89 (SC-62). Collector/emitter voltage Vceo: 32V. Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Marking on the case: BA. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: SMD BA0. BE diode: no. CE diode: no

NPN-Transistor, 4A, TO-126F, TO-126ML, 50V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 50V. Cost): 39pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Ic(pulse): 6A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 6V. Function: NF/SL. Spec info: complementary transistor (pair) 2SD1683. BE diode: no. CE diode: no

NPN-Transistor, 3A, TO-220FP, SC-67, 50V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): SC-67. Collector/emitter voltage Vceo: 50V. Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Collector/emitter voltage Vceo: 50V. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current switching, low-sat. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Tf (type): 20 ns. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Spec info: complementary transistor (pair) 2SD1804. BE diode: no. CE diode: no

NPN-Transistor, 5A, 25V. Collector current: 5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current switching. Note: hFE 140...280. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Spec info: TO-251 (I-Pak)

NPN-Transistor, 3A, 110V. Collector current: 3A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Note: =4000. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 1A, TO-251 ( I-Pak ), ATV, 32V. Collector current: 1A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Collector/emitter voltage Vceo: 32V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 2A. Marking on the case: TU2. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V

NPN-Transistor, 2A, 40V. Collector current: 2A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Note: hFE 180...390. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Spec info: 2SB1240R

NPN-Transistor, 3A, TO-251 ( I-Pak ), ATV, 50V. Collector current: 3A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD1913

NPN-Transistor, 3A, 100V. Collector current: 3A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: >2000. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP

NPN-Transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP

NPN-Transistor, 4A, TO-220FP, TO-220F, 80V. Collector current: 4A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) 2SD1933

NPN-Transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SD1913

NPN-Transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Max hFE gain: 5000. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 160V. Spec info: complementary transistor (pair) 2SD2390