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NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V - MMBT2907ALT1G

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V - MMBT2907ALT1G
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.45£ 0.54£
5 - 9 0.42£ 0.50£
10 - 24 0.40£ 0.48£
25 - 49 0.38£ 0.46£
50 - 99 0.36£ 0.43£
100 - 109 0.34£ 0.41£
Quantity (Set of 10) U.P
1 - 4 0.45£ 0.54£
5 - 9 0.42£ 0.50£
10 - 24 0.40£ 0.48£
25 - 49 0.38£ 0.46£
50 - 99 0.36£ 0.43£
100 - 109 0.34£ 0.41£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1090
Set of 10

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V - MMBT2907ALT1G. NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: SMD '2F'. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 22:25.

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