NPN bipolar transistors

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 22k Ohms. BE diode: no. BE resistor: 22k Ohms. Cost): 100pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Vebo: 10V

NPN transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Type of transistor: NPN

NPN transistor, 0.1A, 40V. Collector current: 0.1A. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Note: 0.3W. Type of transistor: NPN

NPN transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 11pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: NF/L. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. BE diode: no. Cost): 0.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 20mA, TO-92, TO-92, 30 v. Collector current: 20mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 4 v

NPN transistor, 3A, 80V. Collector current: 3A. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: hFE 20...90. Note: T32. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 120V

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 0.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 210V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 0.55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 10V

NPN transistor, 12A, ISOWATT218FX, TO-218-FX, 700V. Collector current: 12A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Collector/emitter voltage Vceo: 700V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Ic(pulse): 18A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Spec info: ICM--16A (tp=5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Vebo: 7V

NPN transistor, 50V, 0.8A, TO-78. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-78. Type of transistor: NPN transistor. Polarity: NPN. Quantity per case: 2. Power: 0.46W

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 450V. BE diode: no. Cost): 2.5pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Vebo: 8V

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 450V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Vebo: 8V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 400V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 60A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 250V. Collector current: 60A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 7pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 75...1000. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

ROHS: Yes. Housing: TO3. Power: 200W. Assembly/installation: THT. Transistor type: Darlington transistor. Polarity: bipolar. Voltage (collector - emitter): 120V. Collector current Ic [A]: 30A

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJ11015. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. Spec info: complementary transistor (pair) MJ11033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN transistor, PCB soldering, TO-3, 50A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 50A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11032G. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C