NPN bipolar transistors

NPN transistor, 8A, TO-220, TO-220AB, 800V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. BE resistor: 100 Ohms (R1), 50 Ohms (R2). Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V. BE diode: no. CE diode: yes

NPN transistor, 400V, 8A, TO-220. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Housing: TO-220. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 100W

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: no. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Housing: TO-220-F. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 35W. Max frequency: 13MHz

NPN transistor, 8A, TO-220FP, TO-220F, 450V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. BE diode: no. CE diode: no

NPN transistor, 5A, TO-220FP, TO-220F, 600V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 600V. BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Vebo: 10V. BE diode: no. CE diode: yes

NPN transistor, 15A, 650V. Collector current: 15A. Collector/emitter voltage Vceo: 650V. Cost): 2.3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Pd (Power Dissipation, Max): 170W. Type of transistor: NPN. Vcbo: 1500V. Spec info: TO-3PBL. BE diode: no. CE diode: no

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no

NPN transistor, 250V, 16A, TO-264. Collector-Emitter Voltage VCEO: 250V. Collector current: 16A. Housing: TO-264. Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Power: 200W

NPN transistor, 16A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21195. BE diode: no. CE diode: no

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4302A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 16A, TO-247, TO-247, 400V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21195. BE diode: no. CE diode: no

NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23. Frequency: 250MHz. Assembly/installation: SMD. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 40V. Collector current Ic [A]: 0.6A. Gain hfe: 35...300. Power: 0.25W

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 75V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 75V. Cost): 5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: UNI. Minimum hFE gain: 100. Marking on the case: 1 P. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 40V. Spec info: SMD 1P. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1P. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1S. Collector-emitter voltage Uceo [V]: 15V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: SMD '2F'. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.2A, SOT-23 ( TO-236 ), SOT-23, 60V. Collector current: 0.2A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 60V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering (SMD). C(in): SOT-23. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: UNI. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: 1AM. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 40V. Spec info: SMD 1AM. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Cost): 80pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 20. Ic(pulse): 0.9A. Marking on the case: 2x. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V. Spec info: screen printing/CMS code 2X. BE diode: no. CE diode: no