NPN bipolar transistors

NPN transistor, 3A, TO-220FP, TO-220FN, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Collector/emitter voltage Vceo: 60V. Cost): 55pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 6V. BE diode: no. CE diode: no

NPN transistor, 12A, TO-3PF, 150V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 150V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 5000. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Spec info: complementary transistor (pair) 2SB1588

NPN transistor, 10A, TO-3PF, 160V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1588

NPN transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SB1625

NPN transistor, 6A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: 40 Ohms. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. BE diode: no. CE diode: yes

NPN transistor, 6A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 6A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: 40 Ohms. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. Spec info: Rbe 40 Ohms. BE diode: no. CE diode: yes

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA Hi-r. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1700V. Vebo: 5V. Spec info: Rbe 50 Ohms. Note: Vce(sat)=5V

NPN transistor, 80V, 3A, MT-3-A1. Collector-Emitter Voltage VCEO: 80V. Collector current: 3A. Housing: MT-3-A1. Type of transistor: NPN power transistor. Polarity: NPN. Power: 1.5W. Max frequency: 50 MHz

NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V. Spec info: complementary transistor (pair) 2SB1659

NPN transistor, 2A, TO-220, 50V. Collector current: 2A. Housing: TO-220. Collector/emitter voltage Vceo: 50V. Resistor B: no. BE resistor: PCB soldering. C(in): TO-220AB. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: 2A. Ic(pulse): 5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Vcbo: 50V. BE diode: no. CE diode: no

NPN transistor, 5A, TO-3 ( TO-204 ), TO-3, 700V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Max hFE gain: 8. Minimum hFE gain: 3. Ic(pulse): 7A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 5V. Vebo: 5V. BE diode: no. CE diode: no

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 22W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-1, 300mA. Housing: PCB soldering. Housing: TO-1. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V. Maximum dissipation Ptot [W]: 0.15W

NPN transistor, 2A, TO-220, TO-220, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, PCB soldering, TO-126, 800mA. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/80V. Maximum dissipation Ptot [W]: 1W

NPN transistor, 0.7A, 25V. Collector current: 0.7A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Function: general purpose. Note: hFE 120...240. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN

NPN transistor, 5A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 5A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: MONITOR

NPN transistor, PCB soldering, TO-220AB, 4A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 4A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 30W

NPN transistor, PCB soldering, D18/C, 1A. Housing: PCB soldering. Housing: D18/C. Collector current Ic [A], max.: 1A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, PCB soldering, TO-3, 12A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 12A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD551. Collector-emitter voltage Uceo [V]: 150V. Maximum dissipation Ptot [W]: 100W

NPN transistor, 1A, TO-126, 120V, TO-126 (TO-225, SOT-32). Collector current: 1A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 120V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 320. Minimum hFE gain: 20. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB631K

NPN transistor, PCB soldering, TO-236, 100mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/25V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-92, 700mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 700mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/15V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 1A, TO-92, TO-92MOD ( 2-5J1A ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 120. Minimum hFE gain: 60. Ic(pulse): 2A. Note: 9mm. Marking on the case: D667. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Epitaxial. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB647