NPN bipolar transistors

NPN transistor, 0.02A, 120V. Collector current: 0.02A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF. Pd (Power Dissipation, Max): 0.4W. Type of transistor: NPN

NPN transistor, 5A, TO-92, TO-92, 20V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 50pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Vebo: 7V

NPN transistor, PCB soldering, D8/C, 500mA. Housing: PCB soldering. Housing: D8/C. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/20V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 12A, TO-220, TO-220C, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220C. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Fast-switching. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D13009K. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.8V. Vebo: 9V

NPN transistor, 12A, TO-3PN ( 2-16C1B ), TO-3PN, 400V. Collector current: 12A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 400V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: D209L. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V

NPN transistor, PCB soldering (SMD), SOT-323, 40mA. Housing: PCB soldering (SMD). Housing: SOT-323. Collector current Ic [A], max.: 40mA. RoHS: yes. Component family: high frequency NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 32. Collector-emitter voltage Uceo [V]: 5.5V. Cutoff frequency ft [MHz]: 2.4GHz. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Vebo: 6V

NPN transistor, 0.1A, TO-18 ( TO-206 ), TO-18, 50V. Collector current: 0.1A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 25V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V

NPN transistor, 1A, TO-39 ( TO-205 ), TO39, 60V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO39. Collector/emitter voltage Vceo: 60V. RoHS: yes. BE diode: no. C(in): 80pF. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for medium power and switching applications. Max hFE gain: 250. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Spec info: complementary transistor (pair) BC161-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Note: ( E,C,B ). Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.2A, TO-92, TO-92, 45V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: BC237/25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 120V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 120V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz

NPN transistor, 60V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO92, 45V. Housing: TO92. Collector-Emitter Voltage VCEO: 45V. Type: transistor for low power applications. Polarity: NPN. Power: 0.625W. Collector-Base Voltage VCBO: 50V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 170. Current Max 1: 0.8A. Series: BC

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C