NPN bipolar transistors

NPN transistor, 5A, TO-3 ( TO-204 ), TO-3, 700V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Max hFE gain: 8. Minimum hFE gain: 3. Ic(pulse): 7A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 5V. Vebo: 5V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 22W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, 2A, TO-220, TO-220, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, PCB soldering, TO-126, 800mA. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/80V. Maximum dissipation Ptot [W]: 1W

NPN transistor, 0.7A, 25V. Collector current: 0.7A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Function: general purpose. Note: hFE 120...240. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN

NPN transistor, 5A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 5A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1A, TO-126 (TO-225, SOT-32), TO-126, 120V. Collector current: 1A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 320. Minimum hFE gain: 20. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 8W. Spec info: complementary transistor (pair) 2SB631K. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V

NPN transistor, PCB soldering, TO-236, 100mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/25V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-92, 700mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 700mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/15V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 1A, TO-92, TO-92MOD ( 2-5J1A ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 120. Minimum hFE gain: 60. Ic(pulse): 2A. Note: 9mm. Marking on the case: D667. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SB647. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Epitaxial. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 4A, 100V. Collector current: 4A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SB682. Type of transistor: NPN

NPN transistor, 8A, TO-3P ( TO-218 SOT-93 ), TO-3P, 120V. Collector current: 8A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: audio power amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) 2SB688. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 6A, 600V. Collector current: 6A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.7A, TO-92, 25V. Collector current: 0.7A. Housing: TO-92. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 3A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 3A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 25W

NPN transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF/SL. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN

NPN transistor, 1A, 60V. Collector current: 1A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SB764. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD871. Collector-emitter voltage Uceo [V]: 1500V/600V. Maximum dissipation Ptot [W]: 50W

NPN transistor, 3A, 30 v. Collector current: 3A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat. Pd (Power Dissipation, Max): 0.75W. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SB772. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 40V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 40V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 4000. Pd (Power Dissipation, Max): 5W. Spec info: TO-126. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN