NPN bipolar transistors

NPN transistor, 0.1A, TO-18 ( TO-206 ), TO-18, 50V. Collector current: 0.1A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 25V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 25V. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. BE diode: no. CE diode: no

NPN transistor, 1A, TO-39 ( TO-205 ), TO39, 60V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO39. Collector/emitter voltage Vceo: 60V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 80pF. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: for medium power and switching applications. Max hFE gain: 250. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) BC161-16. BE diode: no. CE diode: no

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Note: ( E,C,B ). Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.2A, TO-92, TO-92, 45V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. CE diode: yes

NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: BC237/25

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 120V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 120V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz

NPN transistor, 60V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering, TO-92, 800mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-40

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-16. BE diode: no. CE diode: no

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no

NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 45V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-40. BE diode: no. CE diode: no

NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W. Max frequency: 100MHz

NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 400. Minimum hFE gain: 63. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 0.5V. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 32V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BC369