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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.1A, TO-92, TO-92, 50V - BC182B

NPN transistor, 0.1A, TO-92, TO-92, 50V - BC182B
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.16£ 0.19£
10 - 24 0.15£ 0.18£
25 - 49 0.14£ 0.17£
50 - 99 0.14£ 0.17£
100 - 249 0.13£ 0.16£
250 - 499 0.13£ 0.16£
500 - 1676 0.12£ 0.14£
Quantity U.P
1 - 9 0.16£ 0.19£
10 - 24 0.15£ 0.18£
25 - 49 0.14£ 0.17£
50 - 99 0.14£ 0.17£
100 - 249 0.13£ 0.16£
250 - 499 0.13£ 0.16£
500 - 1676 0.12£ 0.14£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1676
Set of 1

NPN transistor, 0.1A, TO-92, TO-92, 50V - BC182B. NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V. Quantity in stock updated on 30/07/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 5155
BC546B

BC546B

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
BC546B
NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC546B. Collector-emitter voltage Uceo [V]: 65V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC546B
NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC546B. Collector-emitter voltage Uceo [V]: 65V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.29£ VAT incl.
(0.24£ excl. VAT)
0.29£
Quantity in stock : 233
2N3904

2N3904

NPN transistor, TO-92, TO-92, 40V, 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. ...
2N3904
NPN transistor, TO-92, TO-92, 40V, 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Collector current: 100mA. RoHS: yes. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. BE diode: no. C(in): 8pF. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100
2N3904
NPN transistor, TO-92, TO-92, 40V, 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Collector current: 100mA. RoHS: yes. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. BE diode: no. C(in): 8pF. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100
Set of 10
0.70£ VAT incl.
(0.58£ excl. VAT)
0.70£
Quantity in stock : 205
BC637

BC637

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to ...
BC637
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. C(in): 50pF. Cost): 7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
BC637
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. C(in): 50pF. Cost): 7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 10
1.30£ VAT incl.
(1.08£ excl. VAT)
1.30£
Quantity in stock : 12696
BC546A

BC546A

NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according...
BC546A
NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V
BC546A
NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V
Set of 10
0.55£ VAT incl.
(0.46£ excl. VAT)
0.55£

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BC556C

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